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RF & MICROWAVE TRANSISTORS
L-BAND AVIONICS APPLICATIONS
. REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
. METAL/CERAMIC HERMETIC PACKAGE
P OUT = 70 W MIN. WITH 6.7 dB GAIN .400 x .400 2NLFL (S042)
ORDER CODE BRANDING
The AM1011-070 device is a high power Class
C transistor specifically designed for L-Band
Avionics transponder/interrogator pulsed output
and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and is capable of withstanding severe output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
The AM1011-070 is supplied in the AMPACTM Her- 1. Collector 3. Emitter
metic M etal/Ceramic package with i nternal 2. Base 4. Base
Input/Output matching structures.
ABSOLUTE MAXIMUM RATINGS (T case = 25
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