Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors ST am1011,075

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am1011,075


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                                                                                     AM1011-075
                                                RF & MICROWAVE TRANSISTORS
                                                L-BAND AVIONICS APPLICATIONS

.
.   REFRACTORY/GOLD METALLIZATION

.
.
    EMITTER SITE BALLASTED
    10:1 VSWR CAPABILITY

.
.
    LOW THERMAL RESISTANCE
    INPUT/OUTPUT MATCHING

.
.
    OVERLAY GEOMETRY
    METAL/CERAMIC HERMETIC PACKAGE
    POUT = 75 W MIN. WITH 9.2 dB GAIN
                                                                       .400 x .400 2LFL (S036)
                                                                           hermetically sealed

                                                                ORDER CODE                     BRANDING
                                                                 AM1011-075                     1011-75


DESCRIPTION                                                             PIN CONNECTION
The AM1011-075 device is a high power Class
C transistor specifically designed for L-Band
Avionics transponder/interrogator pulsed output
and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding 10:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM1011-075 is supplied in the AMPACTM Her-
                                                                     1. Collector           3. Emitter
metic M etal/Ceramic package with i nternal
Input/Output matching structures.                                    2. Base                4. Base



ABSOLUTE MAXIMUM RATINGS (T case = 25 



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