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am1214,175


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                                                                                     AM1214-175
                                                RF & MICROWAVE TRANSISTORS
                                                  L-BAND RADAR APPLICATIONS
.
.   REFRACTORY/GOLD METALLIZATION

.
.
    EMITTER SITE BALLASTED
    3:1 VSWR CAPABILITY

.
.
    LOW THERMAL RESISTANCE
    INPUT/OUTPUT MATCHING

.
.
    OVERLAY GEOMETRY
    METAL/CERAMIC HERMETIC PACKAGE
    POUT = 160 W MIN. WITH 7.3 dB GAIN
                                                                       .400 x .500 2LFL (S038)
                                                                           hermetically sealed
                                                                ORDER CODE                      BRANDING
                                                                 AM1214-175                      1214-175




DESCRIPTION                                                             PIN CONNECTION

The AM1214-175 device is a high power Class
C transistor specifically designed for L-Band radar
pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and is capable of withstanding 3:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM1214-175 is supplied in the BIGPACTM Her-
                                                                     1. Collector           3. Emitter
metic M etal/Ceramic package with i nternal
Input/Output matching structures.                                    2. Base                4. Base



ABSOLUTE MAXIMUM RATINGS (T case = 25 



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