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RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
. REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
. METAL/CERAMIC HERMETIC PACKAGE
P OUT = 200 W MIN. WITH 7.0 dB GAIN .400 x .500 2LFL (M205)
ORDER CODE BRANDING
The AM1214-200 device is a high power Class
C transistor specifically designed for L-Band Radar
pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures, and wiil tolerate severe mismatch and over-
drive conditions. Low RF thermal resistance and
computerized automatic wire bonding techniques
ensure high reliability and product consistency.
AM1214-200 is supplied in the BIGPACTM hermetic 1. Collector 3. Emitter
metal/ceramic package with internal input/output 2. Base 4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25
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