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                                                                                       AM1214-200
                                                RF & MICROWAVE TRANSISTORS
                                                  L-BAND RADAR APPLICATIONS

.
.   REFRACTORY/GOLD METALLIZATION
                                                                                              PRELIMINARY DATA



.
.
    EMITTER SITE BALLASTED
    LOW THERMAL RESISTANCE

.
.
    INPUT/OUTPUT MATCHING
    OVERLAY GEOMETRY

.   METAL/CERAMIC HERMETIC PACKAGE
    P OUT = 200 W MIN. WITH 7.0 dB GAIN                                 .400 x .500 2LFL (M205)
                                                                            hermetically sealed
                                                                ORDER CODE                      BRANDING
                                                                 AM1214-200                      1214-200




                                                                          PIN CONNECTION
DESCRIPTION
The AM1214-200 device is a high power Class
C transistor specifically designed for L-Band Radar
pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures, and wiil tolerate severe mismatch and over-
drive conditions. Low RF thermal resistance and
computerized automatic wire bonding techniques
ensure high reliability and product consistency.
AM1214-200 is supplied in the BIGPACTM hermetic                        1. Collector           3. Emitter
metal/ceramic package with internal input/output                       2. Base                4. Base
matching structures.


ABSOLUTE MAXIMUM RATINGS (T case = 25 

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