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am1214,300


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                                                                                       AM1214-300
                                                RF & MICROWAVE TRANSISTORS
                                                  L-BAND RADAR APPLICATIONS
.
.   REFRACTORY/GOLD METALLIZATION

.
.
    EMITTER SITE BALLASTED
    5:1 VSWR CAPABILITY

.
.
    LOW THERMAL RESISTANCE
    INPUT/OUTPUT MATCHING

.
.
    OVERLAY GEOMETRY
    METAL/CERAMIC HERMETIC PACKAGE
    POUT = 270 W MIN. WITH 6.3 dB GAIN
                                                                         .400 x .500 2LFL (S038)
                                                                             hermetically sealed
                                                                ORDER CODE                        BRANDING
                                                                 AM1214-300                        1214-300




DESCRIPTION                                                               PIN CONNECTION

The AM1214-300 device is a high power transistor
specifically designed for L-Band radar pulsed out-
put and driver applications.
This device is designed for operation under moder-
ate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 output VSWR
at rated RF conditions. Low RF thermal resistance
and computerized automatic wire bonding tech-
niques ensure high reliability and product consist-
ency.
The AM1214-300 is supplied in the BIGPACTM Her-                        1. Collector           3. Emitter
metic M etal/Ceramic package with i nternal                            2. Base                4. Base
Input/Output matching structures.


ABSOLUTE MAXIMUM RATINGS (T case = 25 



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