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RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
. REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
METAL/CERAMIC HERMETIC PACKAGE
POUT = 270 W MIN. WITH 6.3 dB GAIN
.400 x .500 2LFL (S038)
ORDER CODE BRANDING
DESCRIPTION PIN CONNECTION
The AM1214-300 device is a high power transistor
specifically designed for L-Band radar pulsed out-
put and driver applications.
This device is designed for operation under moder-
ate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 output VSWR
at rated RF conditions. Low RF thermal resistance
and computerized automatic wire bonding tech-
niques ensure high reliability and product consist-
The AM1214-300 is supplied in the BIGPACTM Her- 1. Collector 3. Emitter
metic M etal/Ceramic package with i nternal 2. Base 4. Base
Input/Output matching structures.
ABSOLUTE MAXIMUM RATINGS (T case = 25
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