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                                                                                         AM1214-325
                                                RF & MICROWAVE TRANSISTORS
                                                  L-BAND RADAR APPLICATIONS
.
.   REFRACTORY/GOLD METALLIZATION

.
.
    EMITTER SITE BALLASTED
    5:1 VSWR CAPABILITY

.
.
    LOW THERMAL RESISTANCE
    INPUT/OUTPUT MATCHING

.
.
    OVERLAY GEOMETRY
    METAL/CERAMIC HERMETIC PACKAGE
    POUT = 325 W MIN. WITH 6.4 dB GAIN
                                                                           .400 x .500 2LFL (S038)
                                                                               hermetically sealed

                                                                    ORDER CODE                      BRANDING
                                                                     AM1214-325                      1214-325




                                                                            PIN CONNECTION
DESCRIPTION
The AM1214-325 device is a high power transistor
specifically designed for L-Band radar pulsed out-
put and driver applications.
This device is designed for operation under moder-
ate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 VSWR at rated
RF conditions. Low RF thermal resistance and
computerized automatic wire bonding techniques
ensure high reliability and product consistency.
The AM1214-325 is supplied in the BIGPACTM Her-                          1. Collector           3. Emitter
metic M etal/Ceramic package with i nternal                              2. Base                4. Base
Input/Output matching structures.

ABSOLUTE MAXIMUM RATINGS (T case                      =   25 

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