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                                                                                     AM1214-100
                                                RF & MICROWAVE TRANSISTORS
                                                  L-BAND RADAR APPLICATIONS

.
.   REFRACTORY/GOLD METALLIZATION
                                                                                            PRELIMINARY DATA



.
.
    EMITTER SITE BALLASTED
    LOW THERMAL RESISTANCE

.
.
    INPUT/OUTPUT MATCHING
    OVERLAY GEOMETRY

.   METAL/CERAMIC HERMETIC PACKAGE
    POUT = 100 W MIN. WITH 6.0 dB GAIN                                 .400 x .500 2LFL (S038)
                                                                           hermetically sealed
                                                                ORDER CODE                       BRANDING
                                                                 AM1214-100                       1214-100




DESCRIPTION                                                             PIN CONNECTION

The AM1214-100 device is a high power Class
C transistor specifically designed for L-Band Radar
pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding 3:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
AM1214-100 is supplied in the grounded IMPACTM                       1. Collector           3. Emitter
hermetic metal/ceramic package with internal
                                                                     2. Base                4. Base
input/output matching structures.


ABSOLUTE MAXIMUM RATINGS (T case = 25

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