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RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
. REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
. METAL/CERAMIC HERMETIC PACKAGE
POUT = 100 W MIN. WITH 6.0 dB GAIN .400 x .500 2LFL (S038)
ORDER CODE BRANDING
DESCRIPTION PIN CONNECTION
The AM1214-100 device is a high power Class
C transistor specifically designed for L-Band Radar
pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding 3:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
AM1214-100 is supplied in the grounded IMPACTM 1. Collector 3. Emitter
hermetic metal/ceramic package with internal
2. Base 4. Base
input/output matching structures.
ABSOLUTE MAXIMUM RATINGS (T case = 25
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