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                                                                                    AM1517-012
                              RF & MICROWAVE TRANSISTORS
                   SATELLITE COMMUNICATIONS APPLICATIONS

.
.   REFRACTORY/GOLD METALLIZATION

.
.
    EMITTER SITE BALLASTED
     :1 VSWR CAPABILITY

.
.
    LOW THERMAL RESISTANCE
    INPUT/OUTPUT MATCHING

.   METAL/CERAMIC HERMETIC PACKAGE
    POUT = 12 W MIN. WITH 8.5 dB GAIN                                .400 x .400 2NLFL (S042)
                                                                          hermeticallysealed
                                                               ORDER CODE                      BRANDING
                                                                AM1517-012                      1517-12



                                                                       PIN CONNECTION

DESCRIPTION
The AM1517-012 power transistor is designed spe-
cifically for Satellite communications applications
in the 1.5 - 1.7 GHz frequency range.
The device is capable of withstanding any mis-
match load condition at any phase angle (VSWR
:1) under full rated conditions. The unit is an
overlay, emitter site ballasted, geometry utilizing
a Refractory/Gold metallization system.
The AM1517-012 is supplied in the AMPACTM Her-                      1. Collector           3. Emitter
metic/Ceramic package with internal Input/Output                    2. Base                4. Base
matching structures.


ABSOLUTE MAXIMUM RATINGS (T case = 25 

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