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RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
. REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
. METAL/CERAMIC HERMETIC PACKAGE
POUT = 125 W MIN. WITH 7.0 dB GAIN .400 x .500 2LFL (S038)
ORDER CODE BRANDING
DESCRIPTION AM2729-125 2729-125
The AM2729-125 device is a high power silicon
bipolar NPN transistor specifically designed for
medium pulse S-Band radar output and driver PIN CONNECTION
This device is characterized at 50
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