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am2729,125


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                                                                                     AM2729-125
                                                RF & MICROWAVE TRANSISTORS
                                                  S-BAND RADAR APPLICATIONS

.
.   REFRACTORY/GOLD METALLIZATION

.
.
    EMITTER SITE BALLASTED
    LOW THERMAL RESISTANCE

.
.
    INPUT/OUTPUT MATCHING
    OVERLAY GEOMETRY

.   METAL/CERAMIC HERMETIC PACKAGE
    POUT = 125 W MIN. WITH 7.0 dB GAIN                                 .400 x .500 2LFL (S038)
                                                                           hermetically sealed

                                                               ORDER CODE                        BRANDING
DESCRIPTION                                                     AM2729-125                        2729-125

The AM2729-125 device is a high power silicon
bipolar NPN transistor specifically designed for
medium pulse S-Band radar output and driver                             PIN CONNECTION
applications.
This device is characterized at 50 



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