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                                                                                     AM2931-110
                                                RF & MICROWAVE TRANSISTORS
                                                  S-BAND RADAR APPLICATIONS

.
.   REFRACTORY/GOLD METALLIZATION

.
.
    EMITTER SITE BALLASTED
    3:1 VSWR CAPABILITY

.
.
    LOW THERMAL RESISTANCE
    INPUT/OUTPUT MATCHING

.
.
    OVERLAY GEOMETRY
    METAL/CERAMIC HERMETIC PACKAGE
    POUT = 105 W MIN. WITH 6.2 dB GAIN
                                                                       .400 x .500 2L SFL (S138)
                                                                            hermetically sealed

                                                                ORDER CODE                      BRANDING
                                                                 AM2931-110                      2931-110



DESCRIPTION                                                             PIN CONNECTION
The AM2931-110 is a high power silicon bipolar
NPN transistor specifically designed for S-Band
radar pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and can withstand a 3:1 output VSWR. Low
RF thermal resistance, refractory/gold metalliza-
tion, and computerized automatic wire bonding
techniques ensure high reliability and product con-
sistency (including phase characteristics).
The AM2931-110 is supplied in the BIGPACTM Her-
metic M etal/Ceramic package with i nternal                          1. Collector           3. Emitter
Input/Output matching circuitry, and is intended                     2. Base                4. Base
for military and other high reliability applications.


ABSOLUTE MAXIMUM RATINGS (T case = 25 

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