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RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
. REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
3:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
METAL/CERAMIC HERMETIC PACKAGE
POUT = 105 W MIN. WITH 6.2 dB GAIN
.400 x .500 2L SFL (S138)
ORDER CODE BRANDING
DESCRIPTION PIN CONNECTION
The AM2931-110 is a high power silicon bipolar
NPN transistor specifically designed for S-Band
radar pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and can withstand a 3:1 output VSWR. Low
RF thermal resistance, refractory/gold metalliza-
tion, and computerized automatic wire bonding
techniques ensure high reliability and product con-
sistency (including phase characteristics).
The AM2931-110 is supplied in the BIGPACTM Her-
metic M etal/Ceramic package with i nternal 1. Collector 3. Emitter
Input/Output matching circuitry, and is intended 2. Base 4. Base
for military and other high reliability applications.
ABSOLUTE MAXIMUM RATINGS (T case = 25
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