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BCP55/56
MEDIUM POWER AMPLIFIER
ADVANCE DATA
s SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
s MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
s GENERAL PURPOSE MAINLY INTENDED
2
FOR USE IN MEDIUM POWER INDUSTRIAL
APPLICATION AND FOR AUDIO AMPLIFIER
OUTPUT STAGE 3
2
s PNP COMPLEMENTS ARE BCP52 AND 1
BCP53 RESPECTIVELY
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BCP55 BCP56
V CBO Collector-Base Voltage (I E = 0) 60 100 V
V CEO Collector-Emitter Voltage (I B = 0) 60 80 V
V CER Collector-Emitter Voltage (R BE = 1K) 60 100 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 1 A
I CM Collector Peak Current (t p < 5 ms) 1.5 A
IB Base Current 0.1 A
I BM Base Peak Current (t p < ms) 0.2 A
P tot Total Dissipation at T c = 25 o C 2 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
October 1997 1/4
BCP55/56
THERMAL DATA
o
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