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BD434/6/8
COMPLEMENTARY SILICON POWER TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The BD433, BD435, and BD437 are silicon
epitaxial-base NPN power transistors in Jedec
SOT-32 plastic package, intented for use in
medium power linear and switching applications.
The BD433 is especially suitable for use in 1
car-radio output stages. 2
3
The complementary PNP types are BD434,
BD436, and BD438 respectively. SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD433 BD435 BD437
PNP BD434 BD436 BD438
V CBO Collector-Base Voltage (I E = 0) 22 32 45 V
V CES Collector-Emitter Voltage (V BE = 0) 22 32 45 V
V CEO Collector-Emitter Voltage (I B = 0) 22 32 45 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 4 A
I CM Collector Peak Current (t 10 ms) 7 A
IB Base Current 1 A
P tot Total Dissipation at T c 25 o C 36 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
For PNP types voltage and current values are negative.
June 1997 1/4
BD433/434/435/436/437/438
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 3.5 C/W
o
R thj-amb Thermal Resistance Junction-ambient Max 100 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cut-off for BD433/434 V CB = 22 V 100
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