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                                                                                    BD533/5/7
                                                                                    BD534/6/8

        COMPLEMENTARY SILICON POWER TRANSISTORS
s   BD534, BD535, BD536, BD537 AND BD538
    ARE SGS-THOMSON PREFERRED
    SALESTYPES

DESCRIPTION
The BD533, BD535, and BD537 are silicon
epitaxial-base NPN power transistors in Jedec
TO-220 plastic package, intented for use in
medium power linear and switching applications.                                             3
The complementary PNP types are BD534,                                                  2
                                                                                    1
BD536, and BD538 respectively.
                                                                          TO-220




                                                               INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                               Value                   Uni t
                                                         NPN   BD533    BD535           BD537
                                                         PNP   BD534    BD536           BD538
     V CBO      Collector-Base Voltage (IE = 0)                  45       60                80    V
     V CES      Collector-Emitter Voltage (V BE = 0)             45       60                80    V
     V CEO      Collector-Emitter Voltage (I B = 0)              45       60                80    V
     V EBO      Emitter-Base Voltage (I C = 0)                             5                      V
     I C, I E   Collector and Emitter Current                              8                      A
       IB       Base Current                                               1                      A
     P t ot     Total Dissipation at T c  25 C  o
                                                                          50                      W
                                                                                                  o
     T stg      Storage Temperature                                    -65 to 150                     C
                                                                                                  o
       Tj       Max. O perating Junction Temperature                      150                         C
For PNP types voltage and current values are negative.


June 1997                                                                                                 1/4
BD533/BD534/BD535/BD536/BD537/BD538

THERMAL DATA
                                                                                                              o
  R t hj-ca se   Thermal Resistance Junction-case                                 Max          2.5                C/W
                                                                                                              o
  R t hj- amb    Thermal Resistance Junction-ambient                              Max          70                 C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symb ol              Parameter                           Test Cond ition s            Min.   Typ .   Max.   Un it
      I CBO      Collector Cut-off            for BD533/534         V CB = 45 V                        100        



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