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                                                                                    BD533FP
                                                                                    BD534FP

        COMPLEMENTARY SILICON POWER TRANSISTORS
s   BD534FP IS SGS-THOMSON PREFERRED
    SALESTYPE
s   FULLY MOLDED ISOLATED PACKAGE
s   2000 V DC ISOLATION (U.L. COMPLIANT)

DESCRIPTION
The BD533FP is silicon epitaxial-base NPN
power transistor in Jedec TO-220FP fully molded
isolated package, intented for use in medium                                                3
power linear and switching applications.                                                2
                                                                                    1
The complementary PNP type is BD534FP.
                                                                         TO-220FP




                                                               INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                               Value                  Uni t
                                                         NPN           BD533FP
                                                         PNP           BD534FP
     V CBO      Collector-Base Voltage (IE = 0)                           45                     V
     V CES      Collector-Emitter Voltage (V BE = 0)                      45                     V
     V CEO      Collector-Emitter Voltage (I B = 0)                       45                     V
     V EBO      Emitter-Base Voltage (I C = 0)                             5                     V
     I C, I E   Collector and Emitter Current                              8                     A
       IB       Base Current                                               1                     A
     P t ot     Total Dissipation at T c  25 C  o
                                                                          25                     W
                                                                                                 o
     T stg      Storage Temperature                                    -65 to 150                    C
                                                                                                 o
       Tj       Max. O perating Junction Temperature                      150                        C
For PNP types voltage and current values are negative.


April 1998                                                                                               1/4
BD533FP / BD534FP

THERMAL DATA
                                                                                                              o
  R t hj-ca se   Thermal Resistance Junction-case                                 Max          5.1                C/W
                                                                                                              o
  R t hj- amb    Thermal Resistance Junction-ambient                              Max          70                 C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symb ol              Parameter                           Test Cond ition s            Min.   Typ .   Max.   Un it
      I CBO      Collector Cut-off            V CB = 45 V                                              100        

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