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                                                 COMPLEMENTARY SILICON
                                          POWER DARLINGTON TRANSISTORS


The BD677, BD677A, BD679, BD679A and
BD681 are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration
mounted in Jedec SOT-32 plastic package.
They are intended for use in medium power linar
and switching applications                                                                      1
The complementary PNP types are BD678,                                                  3
BD678A, BD680,          BD680A      and BD682
respectively.                                                                SOT-32

                                                               INTERNAL SCHEMATIC DIAGRAM

                                                                  R1 Typ. = 10 K     R2 Typ. = 150 

    Symb ol                      Parameter                                  Valu e                    Unit
                                                         NPN   BD677/A     BD679/A          BD681
                                                         PNP   BD678/A     BD680/A          BD682
     V CBO    Collector-Base Voltage (I E = 0)                   60           80                100    V
     V CEO    Collector-Emitter Voltage (IB = 0)                 60           80                100    V
     V EBO    Emitter-Base Voltage (IC = 0)                                    5                       V
       IC     Collector Current                                                4                       A
      I CM    Collector Peak Current                                           6                       A
       IB     Base Current                                                    0.1                      A
      P tot   T otal Dissipation at Tc  25 C                                  40                       W
     T s tg   Storage T emperature                                        -65 to 150                      C
       Tj     Max. Operating Junction T emperature                            150                         C
For PNP types voltage and current values are negative.

October 1995                                                                                                  1/4

  R thj -ca se   Thermal Resistance Junction-case                                      Max           3.12               C/W
  R thj- amb     Thermal Resistance Junction-ambient                                   Max           100                C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbo l              Parameter                            T est Con ditio ns               Min .   T yp.   Max.   Unit
      I CBO      Collector Cut-off            V CE = rated VCBO                                              0.2    mA
                 Current (I E = 0)            V CE = rated VCBO       TC = 100 C                              2     mA
      I CEO      Collector Cut-off            V CE = half rated V CEO                                        0.5    mA
                 Current (I B = 0)
      I EBO      Emitter Cut- off Current     V EB = 5 V                                                      2     mA
                 (I C = 0)
 V CEO(sus)  Collector-Emitter                I C = 50 mA
             Sustaining Voltage               for BD677/677A/678/678A                         60                        V
                                              for BD679/679A/680/680A                         80                        V
                                              for BD681/682                                  100                        V
  V CE(sat)      Collector-Emitter            for BD677/678/679/680/681/682
                 Saturation Voltage           I C = 1.5 A  I B = 30 mA                                       2.5        V
                                              for BD677A/678A/679A/680A
                                              IC = 2 A     I B = 40 mA                                       2.8        V
      V BE       Base-Emitter Voltage         for BD677/678/679/680/681/682
                                              I C = 1.5 A  V CE = 3 V                                        2.5        V
                                              for BD677A/678A/679A/680A
                                              IC = 2 A     V CE = 3 V                                        2.5        V
      h FE       DC Current Gain              for BD677/678/679/680/681/682
                                              I C = 1.5 A  V CE = 3 V                        750
                                              for BD677A/678A/679A/680A
                                              IC = 2 A     V CE = 3 V                        750
       h fe      Small Signal Current         I C = 1.5 A      V CE = 3 V        f = 1MHz     1
 Pulsed: Pulse duration = 300 

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