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                                                                  BD677/A/679/A/681
                                                                  BD678/A/680/A/682
                                                 COMPLEMENTARY SILICON
                                          POWER DARLINGTON TRANSISTORS
s   SGS-THOMSON PREFERRED SALESTYPES
s   COMPLEMENTARY PNP - NPN DEVICES
s   MONOLITHIC DARLINGTON
    CONFIGURATION
s   INTEGRATED ANTIPARALLEL
    COLLECTOR-EMITTER DIODE

APPLICATION
s LINEAR AND SWITCHING INDUSTRIAL                                                                 1
  EQUIPMENT                                                                                   2
                                                                                          3


DESCRIPTION                                                                    SOT-32
The BD677, BD677A, BD679, BD679A and
BD681 are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration
mounted in Jedec SOT-32 plastic package.
They are intended for use in medium power linar
and switching applications                                     INTERNAL SCHEMATIC DIAGRAM
The complementary PNP types are BD678,
BD678A, BD680, BD680A and                  BD682
respectively.




                                                               R 1 Typ.= 7K            R 2 T yp.= 230 



ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                                     Value                     Uni t
                                                         NPN   BD677/A     BD679/A            BD681
                                                         PNP   BD678/A     BD680/A            BD682
     V CBO    Collector-Base Voltage (IE = 0)                     60            80                100     V
     V CEO    Collector-Emitter Voltage (I B = 0)                 60            80                100     V
     V EBO    Emitter-Base Voltage (I C = 0)                                     5                        V
      IC      Collector Current                                                  4                        A
     I CM     Collector Peak Current                                             6                        A
      IB      Base Current                                                      0.1                       A
                                                 o
     P t ot   Total Dissipation at T c  25 C                                    40                        W
                                                                                                          o
     T stg    Storage Temperature                                         -65 to 150                          C
                                                                                                          o
      Tj      Max. O perating Junction Temperature                             150                            C
For PNP types voltage and current values are negative.


September 1997                                                                                                    1/6
BD677/677A/678/678A/679/679A/680/680A/681/682

THERMAL DATA
                                                                                                                 o
  R t hj-ca se   Thermal Resistance Junction-case                                   Max           3.12               C/W
                                                                                                                 o
  R t hj- amb    Thermal Resistance Junction-ambient                                Max           100                C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symb ol              Parameter                            Test Cond ition s              Min.   Typ .   Max.   Un it
                 Collector Cut-off            V CE = rated V CBO                                          0.2    mA
      I CBO
                 Current (IE = 0)             V CE = rated V CBO      T C = 100 o C                        2     mA
                 Collector Cut-off            V CE = half rated V CEO
      I CEO                                                                                               0.5    mA
                 Current (IB = 0)
                 Emitter Cut-off Current      V EB = 5 V
      I EBO                                                                                                2     mA
                 (I C = 0)
                 Collector-Emitter            I C = 50 mA
                 Sustaining Voltage           for BD677/677A/678/678A                       60                       V
 V CEO(sus )
                                              for BD679/679A/680/680A                       80                       V
                                              for BD681/682                                100                       V
                 Collector-Emitter            for BD677/678/679/680/681/682
                 Saturation Voltage           I C = 1.5 A  I B = 30 mA                                    2.5        V
  V CE(sat )
                                              for BD677A/678A/679A/680A
                                              IC = 2 A     IB = 40 mA                                     2.8        V
                 Base-Emitter Voltage         for BD677/678/679/680/681/682
                                              I C = 1.5 A  V CE = 3 V                                     2.5        V
      V BE 
                                              for BD677A/678A/679A/680A
                                              IC = 2 A     V CE = 3 V                                     2.5        V
                 DC Current G ain             for BD677/678/679/680/681/682
                                              I C = 1.5 A  V CE = 3 V                      750
      h FE
                                              for BD677A/678A/679A/680A
                                              IC = 2 A     V CE = 3 V                      750
                 Small Signal Current         I C = 1.5 A      V CE = 3 V       f = 1MHz
       hf e                                                                                 1
                 Gain
 Pulsed: Pulse duration = 300 



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