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                                                                      BD707/709/711
                                                                      BD708/710/712

       COMPLEMENTARY SILICON POWER TRANSISTORS
s   SGS-THOMSON PREFERRED SALESTYPES
s   COMPLEMENTARY PNP - NPN DEVICES

APPLICATION
s LINEAR AND SWITCHING INDUSTRIAL
  EQUIPMENT

DESCRIPTION
The BD707, BD709, and BD711 are silicon                                                    3
epitaxial-base NPN power transistors in Jedec                                          2
                                                                                   1
TO-220 plastic package, intented for use in
power linear and switching applications.
The complementary PNP types are BD708,                                   TO-220
BD710, and BD712 respectively.




                                                              INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                              Value                  Uni t
                                                        NPN   BD707    BD709           BD711
                                                        PNP   BD708    BD710           BD712
     V CBO    Collector-Base Voltage (IE = 0)                   60       80             100     V
     V CER    Collector-Emitter Voltage (V BE = 0)              60       80             100     V
     V CEO    Collector-Emitter Voltage (I B = 0)               60       80             100     V
     V EBO    Emitter-Base Voltage (I C = 0)                              5                     V
      IC      Collector Current                                          12                     A
      IB      Base Current                                                5                     A
                                                 o
     P t ot   Total Dissipation at T c  25 C                             75                     W
                                                                                                o
     T stg    Storage Temperature                                     -65 to 150                    C
                                                                                                o
      Tj      Max. O perating Junction Temperature                       150                        C
For PNP types voltage and current values are negative


September 1997                                                                                          1/6
BD707/708/709/710/711/712

THERMAL DATA
                                                                                                                o
  R t hj-ca se   Thermal Resistance Junction-case                                   Max          1.67               C/W
                                                                                                                o
  R t hj-ca se   Thermal Resistance Junction-ambient                                Max           70                C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symb ol              Parameter                            Test Cond ition s             Min.   Typ .   Max.   Un it
      I CBO      Collector Cut-off            for BD707/708          V CB = 60 V                         100        

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