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                                                                         NPN power transistor

   NPN transistor

   General purpose switching

Description                                                                                 2
The device is manufactured in Planar technology                               SOT-32
with "Base Island" layout. The resulting transistor                          (TO-126)
shows exceptional high gain performance
coupled with very low saturation voltage.

                                                          Figure 1.   Internal schematic diagram

Table 1.     Device summary
   Order code          Marking                        Package                      Packaging

     BD179              BD179                         SOT-32                            Tube

July 2007                                             Rev 2                                               1/9
Electrical ratings                                                         BD179

1           Electrical ratings

            Table 2.      Absolute maximum rating
             Symbol                         Parameter           Value      Unit

              VCBO     Collector-base voltage (IE = 0)           80         V
              VCEO     Collector-base voltage (IB = 0)           80         V
              VEBO     Emitter-base voltage (IC = 0)              5         V
                IC     Collector current                          3         A
               ICM     Collector current current (tp < 5ms)       7         A
                IB     Base current                               1         A
              PTOT     Total dissipation at T case = 25

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