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NPN power transistor
General purpose switching
The device is manufactured in Planar technology SOT-32
with "Base Island" layout. The resulting transistor (TO-126)
shows exceptional high gain performance
coupled with very low saturation voltage.
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
BD179 BD179 SOT-32 Tube
July 2007 Rev 2 1/9
Electrical ratings BD179
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 80 V
VCEO Collector-base voltage (IB = 0) 80 V
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 3 A
ICM Collector current current (tp < 5ms) 7 A
IB Base current 1 A
PTOT Total dissipation at T case = 25
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