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bd234


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                                                                                         BD234

                                                     SILICON PNP TRANSISTOR
s   SGS-THOMSON PREFERRED SALESTYPE
s   PNP TRANSISTOR

DESCRIPTION
The BD234 is a silicon epitaxial-base PNP power
transistor in Jedec SOT-32 plastic package
inteded for use in medium power linear and
switching applications.
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                                                                                 2
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                                                                   SOT-32




                                                        INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                        Value                    Unit
     V CBO   Collector-Base Voltage (I E = 0)                      -45                      V
     V CER   Collector-Emitter Voltage (R BE = 1K)                 -45                      V
     V CEO   Collector-Emitter Voltage (I B = 0)                   -45                      V
     V EBO   Emitter-Base Voltage (I C = 0)                         -5                      V
      IC     Collector Current                                      -2                      A
     I CM    Collector Peak Current                                 -6                      A
     P tot   Total Dissipation at T c  25 o C                      25                       W
                                                                                            o
     T stg   Storage Temperature                                -65 to 150                      C
                                                                                            o
      Tj     Max. Operating Junction Temperature                   150                          C


May 1997                                                                                            1/4
BD234

THERMAL DATA
                                                                                                            o
  R thj-case   Thermal Resistance Junction-case                                  Max           5                C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol               Parameter                           Test Conditions             Min.   Typ.   Max.   Unit
      I CBO    Collector Cut-off              V CB = -45 V                                           -0.1   mA
                                                                         o
               Current (I E = 0)              V CB = -45 V     T c = 150 C                            -2    mA
      I EBO    Emitter Cut-off Current        V EB = -5 V                                             -1    mA
               (I C = 0)
 V CEO(sus)  Collector-Emitter                I C = -100 mA                            -45                      V
             Sustaining Voltage
  V CE(sat)    Collector-Emitter              I C = -1 A      I B = -0.1 A                           -0.6       V
               Saturation Voltage
      V BE     Base-Emitter Voltage           I C = -1 A      V CE = -2 V                            -1.3       V
      h FE     DC Current Gain                I C = -150 mA       V CE = -2 V          40
                                              I C = -1 A          V CE = -2 V          25
       fT      Transition frequency           I C = -250 mA       V CE = -10 V          3                   MHz
h FE1 /h FE2  Matched Pairs                   I C = -150 mA       V CE = -2 V                 1.6
 Pulsed: Pulse duration = 300 



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