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bd235_bd236_bd237_bd238


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                                                                            BD235/BD236
                                                                            BD237/BD238

           COMPLEMENTARY SILICON POWER TRANSISTORS
s   SGS-THOMSON PREFERRED SALESTYPES

DESCRIPTION
The BD235 and BD237 are silicon epitaxial-base
NPN power transistors in Jedec SOT-32 plastic
package inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD236 and
BD238 respectively.                                                                            1
                                                                                           2
                                                                                       3


                                                                             SOT-32




                                                               INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                                  Value                  Uni t
                                                         NPN      BD235                BD237
                                                         PNP      BD236                BD238
     V CBO    Collector-Base Voltage (IE = 0)                      60                   100         V
     V CER    Collector-Base Voltage (R BE = 1K)                   60                   100         V
     V CEO    Collector-Emitter Voltage (I B = 0)                  60                   80          V
     V EBO    Emitter-Base Voltage (I C = 0)                                  5                     V
      IC      Collector Current                                               2                     A
     I CM     Collector Peak Current                                          6                     A
                                                 o
     P t ot   Total Dissipation at T c = 25 C                                25                     W
                                                                                                    o
     T stg    Storage Temperature                                         -65 to 150                    C
                                                                                                    o
      Tj      Max. O perating Junction Temperature                           150                        C
For PNP types voltage and current values are negative.


September 1997                                                                                              1/5
BD235/BD236/BD237/BD238

THERMAL DATA
                                                                                                                o
  R t hj-ca se   Thermal Resistance Junction-case                                   Max           5                 C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symb ol              Parameter                           Test Cond ition s              Min.   Typ .   Max.   Un it
      I CBO      Collector Cut-off            V CE = rated V CEO                                         0.1    mA
                                                                                o
                 Current (IE = 0)             V CE = rated V CEO    Tc = 150 C                            2     mA
      I EBO      Emitter Cut-off Current      V EB = 5 V                                                  1     mA
                 (I C = 0)
 V CEO(sus ) Collector-Emitter                I C = 100 mA
             Sustaining Voltage               for BD235/BD236                             60                        V
                                              for BD237/BD238                             80                        V
  V CE(sat )     Collector-Emitter            IC = 1 A        IB = 0.1 A                                 0.6        V
                 Saturation Voltage
      V BE       Base-Emitter Voltage         IC = 1 A        V CE = 2 V                                 1.3        V
      h FE       DC Current G ain             I C = 150 mA         VCE = 2 V              40
                                              IC = 1 A             V CE = 2 V             25
       fT        Transition frequency         I C = 250 mA         VCE = 10 V              3                    MHz
 hFE1 /h FE 2  Matched Pairs                  I C = 150 mA         VCE = 2 V                     1.6
 Pulsed: Pulse duration = 300 



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