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                                                    Low voltage NPN power transistors

   Low saturation voltage
   NPN transistors

   Audio, power linear and switching applications                                               1

Description                                                                   SOT-32
The devices are manufactured in Planar
technology with "Base Island" layout. The               Figure 1.      Internal schematic diagram
resulting transistor shows exceptional high gain
performance coupled with very low saturation
voltage. The PNP type is BD238.

Table 1.      Device summary
       Order codes                  Marking                       Package                   Packaging

            BD235                   BD235                         SOT-32                            Tube
            BD237                   BD237                         SOT-32                            Tube

June 2009                                     Doc ID 4189 Rev 3                                                  1/9
Absolute maximum ratings                                                         BD235, BD237

1         Absolute maximum ratings

          Table 2.     Absolute maximum ratings
           Symbol                          Parameter                                   Unit
                                                                 BD235         BD237

            VCBO     Collector-base voltage (IE = 0)              60            100     V
            VCER     Collector-emitter voltage (RBE = 1 k)        60            100     V
            VCEO     Collector-emitter voltage (IB = 0)           60            80      V
            VEBO     Emitter-base voltage (IC = 0)                       5              V
             IC      Collector current                                   2              A
             ICM     Collector peak current (tp < ms)                    6              A
            PTOT     Total dissipation at Tcase = 25

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