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bd241_bd242


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                                                                                BD241A/B/C
                                                                                BD242A/B/C

           COMPLEMENTARY SILICON POWER TRANSISTORS
s   SGS-THOMSON PREFERRED SALESTYPES
s   COMPLEMENTARY PNP - NPN DEVICES

DESCRIPTION
The BD241A, BD241B and BD241C are silicon
epitaxial-base NPN transistors mounted in Jedec
TO-220 plastic package.
They are inteded for use in medium power linear
and switching applications.                                                                  3
                                                                                         2
The complementary PNP types are BD242A,                                              1
BD242B and BD242C respectively.
                                                                           TO-220




                                                               INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                                Value                    Unit
                                                         NPN   BD241A   BD241B           BD241C
                                                         PNP   BD242A   BD242B           BD242C
     V CER   Collector-Base Voltage (R BE = 100 )                70        90                115    V
     V CEO   Collector-Emitter Voltage (I B = 0)                 60        80                100    V
     V EBO   Emitter-Base Voltage (I C = 0)                                 5                       V
      IC     Collector Current                                              3                       A
     I CM    Collector Peak Current                                         5                       A
      IB     Base Current                                                   1                       A
     P tot   Total Dissipation at T c  25 o C                              40                       W
     P tot   Total Dissipation at T amb  25 o C                             2                       W
                                                                                                   o
     T stg   Storage Temperature                                        -65 to 150                     C
                                                                                                   o
      Tj     Max. Operating Junction Temperature                           150                         C
For PNP types voltage and current values are negative.


June 1997                                                                                                  1/4
BD241A/B/C/BD242A/B/C

THERMAL DATA
                                                                                                              o
  R thj-case   Thermal Resistance Junction-case                                   Max           3.13              C/W
                                                                                                              o
  R thj-amb    Thermal Resistance Junction-ambient                                Max           62.5              C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol               Parameter                            Test Conditions              Min.   Typ.   Max.   Unit
      I CES    Collector Cut-off              V CE = rated V CEO                                       0.2    mA
               Current (V BE = 0)
      I CEO    Collector Cut-off              for BD241A/BD242A          V CE = 30 V                   0.3    mA
               Current (I B = 0)              for BD241B/BD242B          V CE = 60 V                   0.3    mA
                                              for BD241C/BD242C          V CE = 60 V                   0.3    mA
      I EBO    Emitter Cut-off Current        V EB = 5 V                                                1     mA
               (I C = 0)
 V CEO(sus)  Collector-Emitter                I C = 30 mA
             Sustaining Voltage               for BD241A/BD242A                           60                      V
                                              for BD241B/BD242B                           80                      V
                                              for BD241C/BD242C                          100                      V
  V CE(sat)    Collector-Emitter              IC = 3 A         I B = 0.6 A                             1.2        V
               Saturation Voltage
      V BE     Base-Emitter Voltage           IC = 3 A         V CE = 4 V                              1.8        V
      h FE     DC Current Gain                IC = 1 A         V CE = 4 V                25
                                              IC = 3 A         V CE = 4 V                10
       hfe     Small Signal Current           I C = 0.5 A      V CE = 10 V    f = 1MHz    3
               Gain                           I C = 0.5 A      V CE = 10 V    f = 1KHz   20
 Pulsed: Pulse duration = 300 



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