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                                                                                 BD241BFP
                                                                                 BD242BFP

           COMPLEMENTARY SILICON POWER TRANSISTORS
s   SGS-THOMSON PREFERRED SALESTYPES
s   COMPLEMENTARY PNP - NPN DEVICES
s   FULLY MOLDED ISOLATED PACKAGE
s   2000 V DC ISOLATION (U.L. COMPLIANT)

APPLICATIONS
s GENERAL PURPOSE SWITCHING
s GENERAL PURPOSE AMPLIFIERS
                                                                                            3
DESCRIPTION                                                                             2
                                                                                    1
The BD241BFP is silicon epitaxial-base NPN
transistors mounted in TO-220FP fully molded
isolated package.                                                        TO-220FP
It is inteded for power linear and switching
applications.
The complementary PNP types is the BD242BFP.


                                                               INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                               Value                  Uni t
                                                         NPN          BD241BFP
                                                         PNP          BD242BFP
     V CER    Collector-Base Voltage (R BE = 100 )                        90                     V
     V CEO    Collector-Emitter Voltage (I B = 0)                         80                     V
     V EBO    Emitter-Base Voltage (I C = 0)                               5                     V
      IC      Collector Current                                            3                     A
     I CM     Collector Peak Current                                       5                     A
      IB      Base Current                                                 1                     A
                                                 o
     P t ot   Total Dissipation at T c  25 C                              24                     W
                                                                                                 o
     T stg    Storage Temperature                                      -65 to 150                    C
                                                                                                 o
      Tj      Max. O perating Junction Temperature                        150                        C
For PNP types voltage and current values are negative.


April 1998                                                                                               1/4
BD241BFP / BD242BFP

THERMAL DATA
                                                                                                           o
  R t hj-ca se   Thermal Resistance Junction-case                              Max          5.3                C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symb ol              Parameter                           Test Cond ition s         Min.   Typ .   Max.   Un it
      I CEO      Collector Cut-off            V CE = 60 V                                           0.3    mA
                 Current (IB = 0)
      I CES      Collector Cut-off            V CE = 80 V                                           0.2    mA
                 Current (V BE = 0)
      I EBO      Emitter Cut-off Current      V EB = 5 V                                             1     mA
                 (I C = 0)
 V CEO(sus ) Collector-Emitter                I C = 30 mA                            80                        V
             Sustaining Voltage
             (I B = 0)
  V CE(sat )     Collector-Emitter            IC = 3 A         I B = 0.6 A                          1.2        V
                 Saturation Voltage
  V BE(ON)       Base-Emitter Voltage         IC = 3 A         V CE = 4 V                           1.8        V
      h FE*      DC Current G ain             IC = 1 A         V CE = 4 V            25
                                              IC = 3 A         V CE = 4 V            10
 Pulsed: Pulse duration = 300 



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