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bd241cfp


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                                                                           BD241CFP

              COMPLEMENTARY SILICON POWER TRANSISTOR
s   FULLY MOLDED ISOLATED PACKAGE
s   2000 V DC ISOLATION (U.L. COMPLIANT)

APPLICATIONS
s GENERAL PURPOSE SWITCHING
s GENERAL PURPOSE AMPLIFIERS

DESCRIPTION
The BD241CFP is silicon epitaxial-base NPN                                            3
transistor mounted in TO-220FP fully molded                                       2
                                                                              1
isolated package.
It is inteded for power linear and switching
applications.                                                      TO-220FP




                                                         INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                         Value                  Uni t
     V CER    Collector-Base Voltage (R BE = 100 )                  115                    V
     V CEO    Collector-Emitter Voltage (I B = 0)                   100                    V
     V EBO    Emitter-Base Voltage (I C = 0)                         5                     V
      IC      Collector Current                                      3                     A
     I CM     Collector Peak Current                                 5                     A
      IB      Base Current                                           1                     A
                                                 o
     P t ot   Total Dissipation at T c  25 C                        15                     W
                                                                                           o
     T stg    Storage Temperature                                -65 to 150                    C
                                                                                           o
      Tj      Max. O perating Junction Temperature                  150                        C
For PNP types voltage and current values are negative.



January 1998                                                                                       1/4
BD241CFP

THERMAL DATA
                                                                                                           o
  R t hj-ca se   Thermal Resistance Junction-case                              Max          8.4                C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symb ol              Parameter                           Test Cond ition s         Min.   Typ .   Max.   Un it
      I CEO      Collector Cut-off            V CE = 60 V                                           0.3    mA
                 Current (IB = 0)
      I CES      Collector Cut-off            V CE = 100 V                                          0.2    mA
                 Current (V BE = 0)
      I EBO      Emitter Cut-off Current      V EB = 5 V                                             1     mA
                 (I C = 0)
 V CEO(sus ) Collector-Emitter                I C = 30 mA                            100                       V
             Sustaining Voltage
             (I B = 0)
  V CE(sat )     Collector-Emitter            IC = 3 A         I B = 0.6 A                          1.2        V
                 Saturation Voltage
  V BE(ON)       Base-Emitter Voltage         IC = 3 A         V CE = 4 V                           1.8        V
      h FE*      DC Current G ain             IC = 1 A         V CE = 4 V            25
                                              IC = 3 A         V CE = 4 V            10
 Pulsed: Pulse duration = 300 



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