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                                                                                    BD336

             SILICON PNP POWER DARLINGTON TRANSISTOR
s   SGS-THOMSON PREFERRED SALESTYPE
s   PNP DARLINGTON
s   INTEGRATED ANTIPARALLEL
    COLLECTOR-EMITTER DIODE

APPLICATIONS
s GENERAL PURPOSE SWITCHING
s GENERAL PURPOSE AMPLIFIERS


                                                                                3
DESCRIPTION                                                                 2
                                                                        1
The BD336 is a silicon epitaxial-base PNP
transistor in Darlingon configuration mounted in
SOT-82 plastic package.                                       SOT-82
It is inteded for use in audio output stages
general amplifier and switching applications.



                                                   INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                   Value                    Unit
     V CBO   Collector-Base Voltage (I E = 0)                -100                      V
     V CEO   Collector-Emitter Voltage (I B = 0)             -100                      V
     V EBO   Emitter-Base Voltage (I C = 0)                    -5                      V
      IC     Collector Current                                 -6                      A
     I CM    Collector Peak Current (t p < 10ms)              -10                      A
      IB     Base Current                                    -0.15                     A
     P tot   Total Dissipation at T c  25 o C                 60                       W
                                                                                       o
     T stg   Storage Temperature                           -65 to 150                      C
                                                                                       o
      Tj     Max. Operating Junction Temperature              150                          C


July 1997                                                                                      1/4
BD336

THERMAL DATA
                                                                                                                o
  R thj-case   Thermal Resistance Junction-case                                      Max          2.08              C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol               Parameter                           Test Conditions                 Min.   Typ.   Max.   Unit
      I CBO    Collector Cut-off              V CB = -100 V                                              -0.2   mA
                                                                            o
               Current (I E = 0)              V CB = -100 V    T C = 150 C                                -2    mA
      I CEO    Collector Cut-off              V CE = -50 V                                               -0.5   mA
               Current (I B = 0)
      I EBO    Emitter Cut-off Current        V EB = -5 V                                                 -5    mA
               (I C = 0)
  V CE(sat)    Collector-Emitter              I C = -3 A       I B = -12 mA                               -2        V
               Saturation Voltage
      V BE     Base-Emitter Voltage           I C = -3 A       V CE = -3 V                               -2.5       V
      h FE     DC Current Gain                I C = -0.5 A     V CE = -3 V                        2700
                                              I C = -3 A       V CE = -3 V                 750
                                              I C = -6 A       V CE = -3 V                        400
      VF       Parallel Diode Forward         I F = -3 A                                          -1.8              V
               Voltage
       hfe     Small Signal Current           I C = -3 A     V CE = -3 V        f = 1MHz          150
               Gain
       t on    Turn on Time                   I C = -3 A     V CC = -30 V                          1      2         

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