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                                                                                    BDW51C
                                                                                    BDW52C

                                  SILICON NPN SWITCHING TRANSISTORS
s   SGS-THOMSON PREFERRED SALESTYPES
s   COMPLEMENTARY PNP - NPN DEVICES
s   HIGH CURRENT CAPABILITY
s   FAST SWITCHING SPEED
s   HIGH DC CURRENT GAIN

APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL
  EQUIPMENT
                                                                        1
                                                                            2
DESCRIPTION
The BDW51C is a silicon epitaxial-base NPN
transistor in Jedec TO-3 metal case. It is intended                         TO-3
for use in power linear and switching applications.
The complementary PNP is the BDW52C.



                                                               INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                               Value          Unit
                                                         NPN            BDW51C
                                                         PNP            BDW52C
     V CBO    Collector-Base Voltage (I E = 0)                            100                V
     V CES    Collector-Emitter Voltage (V BE = 0)                        100                V
     V CEO    Collector-Emitter Voltage (I B = 0)                         100                V
     V EBO    Emitter-Base Voltage (I C = 0)                                5                V
        IC    Collector Current                                            15                A
      I CM    Collector Peak Current (repetitive)                          20                A
        IB    Base Current                                                  7                A
      P tot   Total Dissipation at T c = 25 o C                           125               W
                                                                                            o
     T stg    Storage Temperature                                      -65 to 200             C
                                                                                            o
        Tj    Max. Operating Junction Temperature                         200                 C
For PNP types voltage and current values are negative.


July 1997                                                                                         1/4
BDW51C / BDW52C

THERMAL DATA
                                                                                                                o
  R thj-case   Thermal Resistance Junction-case                                      Max          1.4               C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol               Parameter                           Test Conditions                 Min.   Typ.   Max.   Unit
      I CBO    Collector Cut-off              V CB = 100 V                                               500    

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