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BDW94CFI
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s MONOLITHIC DARLINGTON
CONFIGURATION
s COMPLEMENTARY PNP - NPN DEVICES
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL 3
EQUIPMENT 2
1
DESCRIPTION
The BDW93CFI, is a silicon epitaxial-base NPN ISOWATT220
transistor in monolithic Darlington configuration
and is mounted in ISOWATT220 plastic package.
It is intented for use in power linear and switching
applications.
The complementary PNP type is the BDW94CFI.
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 K R 2 Typ. = 150
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
NPN BDW93CF I
PNP BDW94CF I
V CBO Collector-Base Voltage (IE = 0) 100 V
V CEO Collector-Emitter Voltage (I B = 0) 100 V
IC Collector Current 12 A
I CM Collector Peak Current 15 A
IB Base Current 0.2 A
P t ot Total Dissipation at T c 25 C o
40 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 C
For PNP types voltage and current values are negative.
June 1997 1/4
BDW93CFI / BDW94CFI
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case 3.1 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CBO Collector Cut-off V CB = 100 V 100
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