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                                                                          BDX53BFP

                     SILICON POWER DARLINGTON TRANSISTOR

APPLICATIONS:
s GENERAL PURPOSE SWITCHING AND
  AMPLIFIER
s LINEAR AND SWITCHING INDUSTRIAL
  EQUIPMENT
s FULLY MOLDED ISOLATED PACKAGE
s 2000 V DC ISOLATION (U.L. COMPLIANT)
                                                                                      3
DESCRIPTION                                                                       2
                                                                              1
The BDX53BFP is a silicon epitaxial-base NPN
power transistor in monolithic Darlington
configuration and are mounted in T0-220FP fully                    T0-220FP
molded isolated package. It is intented for use in
hammer drivers, audio amplifiers and other
medium power linear and switching applications.


                                                     INTERNAL SCHEMATIC DIAGRAM




                                                        R1 Typ. = 10 K    R 2 Typ. = 150 




ABSOLUTE MAXIMUM RATINGS

 Symbol                      Parameter                            Value                     Uni t
   V CBO     Collector-Base Voltage (IE = 0)                        80                       V
   V CEO     Collector-Emitter Voltage (I B = 0)                    80                       V
   V EBO     Emitter-base Voltage (I C = 0)                          5                       V
     IC      Collector Current                                       8                       A
    I CM     Collector Peak Current (repetitive)                    12                       A
     IB      Base Current                                           0.2                      A
    P t ot   Total Dissipation at T c  25 o C                       29                       W
                                                                                             o
    T stg    Storage Temperature                                -65 to 150                       C
                                                                                             o
     Tj      Max. O perating Junction Temperature                   150                          C



April 1998                                                                                           1/4
BDX53BFP

THERMAL DATA
                                                                                                             o
  R t hj-ca se   Thermal Resistance Junction-case                                Max          4.3                C/W
                                                                                                             o
  R t hj- amb    Thermal Resistance Junction-ambient                             Max          70                 C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)



  Symb ol              Parameter                           Test Cond ition s           Min.   Typ .   Max.   Un it
      I CBO      Collector Cut-off            V CB = 80 V                                             0.2    mA
                 Current (IE = 0)
      I CEO      Collector Cut-off            V CB = 40 V                                             0.5    mA
                 Current (IB = 0)
      I EBO      Emitter Cut-off Current      V EB = 5 V                                               2     mA
                 (I C = 0)
 V CEO(sus ) Collector-Emitter                I C = 100 mA                             80                        V
             Sustaining Voltage
             (IB = 0)
  V CE(sat )     Collector-emitter            IC = 3 A              I B =12 mA                         2         V
                 Saturation Voltage
  V BE(s at)     Base-emitter                 IC = 3 A              I B =12 mA                        2.5        V
                 Saturation Voltage
      hFE        DC Current G ain             IC = 3 A              V CE = 3 V         750
      V F        Parallel-diode Forward       IF = 3 A                                        1.8     2.5        V
                 Voltage                      IF = 8 A                                        2.5                V
 Pulsed: Pulse duration = 300 



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