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bdx53-54


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                                                                  BDX53A/53B/53C
                                                                     BDX54B/54C
                                        COMPLEMENTARY SILICON POWER
                                             DARLINGTON TRANSISTORS
s   BDX53B, BDX53C, BDX54B AND BDX54C
    ARE SGS-THOMSON PREFERRED
    SALESTYPES



APPLICATIONS
s AUDIO AMPLIFIERS
s LINEAR AND SWITCHING INDUSTRIAL                                                          3
  EQUIPMENT                                                                            2
                                                                                   1


DESCRIPTION                                                               TO-220
The BDX53A, BDX53B and BDX53C are silicon
epitaxial-base NPN power transistors in
monolithic Darlington configuration and are
mounted in Jedec TO-220 plastic package. They
are intented for use in hammer drivers, audio
amplifiers and other medium power linear and               INTERNAL SCHEMATIC DIAGRAM
switching applications.
The complementary PNP types for BDX53B and
BDX53C are the BDX54B and BDX54C
respectively.




                                                              R1 Typ. = 10 K    R 2 Typ. = 150 


ABSOLUTE MAXIMUM RATINGS



    Symbol                    Parameter                     Value                                 Uni t
                                                     NPN   BDX53A      BDX53B       BDX53C
                                                     PNP               BDX54B       BDX54C
     V CBO    Collector-Base Voltage (IE = 0)                60           80               100     V
     V CEO    Collector-Emitter Voltage (I B = 0)            60           80               100     V
     V EBO    Emitter-base Voltage (I C = 0)                               5                       V
      IC      Collector Current                                            8                       A
     I CM     Collector Peak Current (repetitive)                         12                       A
      IB      Base Current                                                0.2                      A
     P t ot   Total Dissipation at T c  25 C
                                           o
                                                                          60                       W
                                                                                                   o
     T stg    Storage Temperature                                     -65 to 150                       C
                                                                                                   o
      Tj      Max. O perating Junction Temperature                        150                          C

September 1997                                                                                             1/6
BDX53A/53B/53C-BDX54B/54C

THERMAL DATA
                                                                                                                o
  R t hj-ca se   Thermal Resistance Junction-case                                   Max          2.08               C/W
                                                                                                                o
  R t hj- amb    Thermal Resistance Junction-ambient                                Max           70                C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)



  Symb ol              Parameter                           Test Cond ition s              Min.   Typ .   Max.   Un it
      I CBO      Collector Cut-off            for BDX53A              VCB = 60 V                         0.2    mA
                 Current (IE = 0)             for BDX53B/54B          V CB = 80 V                        0.2    mA
                                              for BDX53C/54C          V CB = 100V                        0.2    mA
      I CEO      Collector Cut-off            for BDX53A              VCB = 30 V                         0.5    mA
                 Current (IB = 0)             for BDX53B/54B          V CB = 40 V                        0.5    mA
                                              for BDX53C/54C          V CB = 50V                         0.5    mA
      I EBO      Emitter Cut-off Current      V EB = 5 V                                                  2     mA
                 (I C = 0)
 V CEO(sus ) Collector-Emitter                I C = 100 mA          for BDX53A             60                       V
             Sustaining Voltage                                     for BDX53B/54B         80                       V
             (IB = 0)                                               for BDX53C/54C        100                       V
  V CE(sat )     Collector-emitter            IC = 3 A              I B =12 mA                            2         V
                 Saturation Voltage
  V BE(s at)     Base-emitter                 IC = 3 A              I B =12 mA                           2.5        V
                 Saturation Voltage
      hFE        DC Current G ain             IC = 3 A              V CE = 3 V            750
      V F        Parallel-diode Forward       IF = 3 A                                           1.8     2.5        V
                 Voltage                      IF = 8 A                                           2.5                V
 Pulsed: Pulse duration = 300 



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