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BDX53A/53B/53C
BDX54B/54C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s BDX53B, BDX53C, BDX54B AND BDX54C
ARE SGS-THOMSON PREFERRED
SALESTYPES
APPLICATIONS
s AUDIO AMPLIFIERS
s LINEAR AND SWITCHING INDUSTRIAL 3
EQUIPMENT 2
1
DESCRIPTION TO-220
The BDX53A, BDX53B and BDX53C are silicon
epitaxial-base NPN power transistors in
monolithic Darlington configuration and are
mounted in Jedec TO-220 plastic package. They
are intented for use in hammer drivers, audio
amplifiers and other medium power linear and INTERNAL SCHEMATIC DIAGRAM
switching applications.
The complementary PNP types for BDX53B and
BDX53C are the BDX54B and BDX54C
respectively.
R1 Typ. = 10 K R 2 Typ. = 150
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
NPN BDX53A BDX53B BDX53C
PNP BDX54B BDX54C
V CBO Collector-Base Voltage (IE = 0) 60 80 100 V
V CEO Collector-Emitter Voltage (I B = 0) 60 80 100 V
V EBO Emitter-base Voltage (I C = 0) 5 V
IC Collector Current 8 A
I CM Collector Peak Current (repetitive) 12 A
IB Base Current 0.2 A
P t ot Total Dissipation at T c 25 C
o
60 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 C
September 1997 1/6
BDX53A/53B/53C-BDX54B/54C
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 2.08 C/W
o
R t hj- amb Thermal Resistance Junction-ambient Max 70 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CBO Collector Cut-off for BDX53A VCB = 60 V 0.2 mA
Current (IE = 0) for BDX53B/54B V CB = 80 V 0.2 mA
for BDX53C/54C V CB = 100V 0.2 mA
I CEO Collector Cut-off for BDX53A VCB = 30 V 0.5 mA
Current (IB = 0) for BDX53B/54B V CB = 40 V 0.5 mA
for BDX53C/54C V CB = 50V 0.5 mA
I EBO Emitter Cut-off Current V EB = 5 V 2 mA
(I C = 0)
V CEO(sus ) Collector-Emitter I C = 100 mA for BDX53A 60 V
Sustaining Voltage for BDX53B/54B 80 V
(IB = 0) for BDX53C/54C 100 V
V CE(sat ) Collector-emitter IC = 3 A I B =12 mA 2 V
Saturation Voltage
V BE(s at) Base-emitter IC = 3 A I B =12 mA 2.5 V
Saturation Voltage
hFE DC Current G ain IC = 3 A V CE = 3 V 750
V F Parallel-diode Forward IF = 3 A 1.8 2.5 V
Voltage IF = 8 A 2.5 V
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