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bdx53d-54


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                                                                                       BDX53BFI
                                                                                       BDX54BFI
                                             COMPLEMENTARY SILICON POWER
                                                  DARLINGTON TRANSISTORS
s   COMPLEMENTARY PNP - NPN DEVICES

APPLICATIONS:
s GENERAL PURPOSE SWITCHING AND
  AMPLIFIER
s LINEAR AND SWITCHING INDUSTRIAL
  EQUIPMENT

DESCRIPTION                                                                                     3
The BDX53BFI is silicon epitaxial-base NPN                                                  2
                                                                                        1
power transistor in monolithic Darlington
configuration and are mounted in ISOWATT220
plastic package. It is intented for use in hammer                          ISOWATT220
drivers, audio amplifiers and other medium power
linear and switching applications.
The complementary PNP type is the BDX54BFI.


                                                               INTERNAL SCHEMATIC DIAGRAM




                                                                  R1 Typ. = 10 K    R 2 Typ. = 150 




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                                  Value                     Uni t
                                                         NPN              BDX53BFI
                                                         PNP              BDX54BFI
     V CBO    Collector-Base Voltage (IE = 0)                                 80                       V
     V CEO    Collector-Emitter Voltage (I B = 0)                             80                       V
     V EBO    Emitter-base Voltage (I C = 0)                                   5                       V
      IC      Collector Current                                                8                       A
     I CM     Collector Peak Current (repetitive)                             12                       A
      IB      Base Current                                                    0.2                      A
     P t ot   Total Dissipation at T c  25 o C                                30                       W
                                                                                                       o
     T stg    Storage Temperature                                         -65 to 150                       C
                                                                                                       o
      Tj      Max. O perating Junction Temperature                            150                          C
For PNP types voltage and current values are negative.

May 1997                                                                                                       1/4
BDX53BFP / BDX54BFP

THERMAL DATA
                                                                                                             o
  R t hj-ca se   Thermal Resistance Junction-case                                Max          4.17               C/W
                                                                                                             o
  R t hj- amb    Thermal Resistance Junction-ambient                             Max           70                C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)



  Symb ol              Parameter                           Test Cond ition s           Min.   Typ .   Max.   Un it
      I CBO      Collector Cut-off            V CB = 80 V                                             0.2    mA
                 Current (IE = 0)
      I CEO      Collector Cut-off            V CB = 40 V                                             0.5    mA
                 Current (IB = 0)
      I EBO      Emitter Cut-off Current      V EB = 5 V                                               2     mA
                 (I C = 0)
 V CEO(sus ) Collector-Emitter                I C = 100 mA                             80                        V
             Sustaining Voltage
             (IB = 0)
  V CE(sat )     Collector-emitter            IC = 3 A              I B =12 mA                         2         V
                 Saturation Voltage
  V BE(s at)     Base-emitter                 IC = 3 A              I B =12 mA                        2.5        V
                 Saturation Voltage
      hFE        DC Current G ain             IC = 3 A              V CE = 3 V         750
      V F        Parallel-diode Forward       IF = 3 A                                        1.8     2.5        V
                 Voltage                      IF = 8 A                                        2.5                V
 Pulsed: Pulse duration = 300 



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