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bdx87-88


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                                                                                          BDX87C
                                                                                          BDX88C
                                        COMPLEMENTARY SILICON POWER
                                             DARLINGTON TRANSISTORS
s   SGS-THOMSON PREFERRED SALESTYPES

DESCRIPTION
The BDX87C is a silicon epitaxial-base NPN
power transistors in monolithic Darlington
configuration and are mounted in Jedec TO-3
metal case. They are intented for use in power
linear and switching applications.
                                                                       1
The complementary PNP types is the BDX88C.
                                                                                 2

                                                                             TO-3




                                                         INTERNAL SCHEMATIC DIAGRAM




                                                            R1 Typ. = 6 K            R2 Typ. = 55 


ABSOLUTE MAXIMUM RATINGS



    Symbol                   Parameter                                 Value                         Unit
                                                   NPN               BDX87C
                                                   PNP               BDX88C
     V CBO   Collector-base Voltage (I E = 0)                           100                           V
     V CEO   Collector-emitter Voltage (I B = 0)                        100                           V
     V EBO   Emitter-base Voltage (I C = 0)                                  5                        V
      IC     Collector Current                                             12                         A
     I CM    Collector Peak Current (repetitive)                           18                         A
      IB     Base Current                                                  0.2                        A
     P tot   Total Dissipation at T c  25 C
                                          o
                                                                        120                           W
                                                                                                     o
     T stg   Storage Temperature                                    -65 to 200                           C
                                                                                                     o
      Tj     Max. Operating Junction Temperature                        200                              C

June 1997                                                                                                    1/4
BDX87C-BDX88C

THERMAL DATA
                                                                                                                  o
  R thj-case   Thermal Resistance Junction-case                                     Max            1.45               C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)



  Symbol               Parameter                           Test Conditions                  Min.   Typ.   Max.    Unit
      I CBO    Collector Cut-off              V CB = 100 V                                                 0.5    mA
               Current (I E = 0)              V CB = 100 V           T   case   = 150 o C                   5     mA
      I CEO    Collector Cut-off              V CB = 50 V                                                   1     mA
               Current (I B = 0)
      I EBO    Emitter Cut-off Current        V EB = 5 V                                                    1     mA
               (I C = 0)
 V CEO(sus)  Collector-Emitter                I C = 100 mA                                  100                       V
             Sustaining Voltage
             (I B = 0)
  V CE(sat)    Collector-emitter              IC = 6 A             I B = 24 mA                              2         V
               Saturation Voltage             I C = 12 A           I B = 120 mA                             3         V
  V BE(sat)    Base-emitter                   I C = 12 A           I B =120 mA                              4         V
               Saturation Voltage
      V BE     Base-emitter Voltage           IC = 6 A             V CE = 3 V                              2.8        V
      h FE     DC Current Gain                IC = 5 A             V CE = 3 V               1000
                                              IC = 6 A             V CE = 3 V               750           18000
                                              I C = 12 A           V CE = 3 V               100
      VF       Parallel-diode Forward         IF = 3 A                                                     1.8        V
               Voltage                        IF = 8 A                                             2.5                V
      hfe      Small SignalCurrent            IC = 5 A             V CE = 3 V                      25
               Gain                           f = 1MHz
 Pulsed: Pulse duration = 300 



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