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bdy90p


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                                                                                 BDY90P

                                        NPN SILICON POWER TRANSISTOR
s   NPN TRANSISTOR
s   LOW COLLECTOR EMITTER SATURATION
    VOLTAGE
s   FAST-SWITCHING SPEED

APPLICATION
s GENERAL PURPOSE SWITCHING
  APPLICATIONS
s GENERAL PURPOSE AMPLIFIERS                                                         3
s DC CURRENT AND BATTERY OPERATED
                                                                                 2
                                                                             1
  ELECTRONIC BALLAST

DESCRIPTION                                                        TO-220
The BDY90P is a silicon multiepitaxial planar
NPN power transistors in TO-220 case intented
for use in switching, linear applications and
emergency lighting.

                                                        INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS



    Symbol                       Parameter                        Value                  Unit
     V CBO   Collector-base Voltage (I E = 0)                      100                    V
     V CEV   Collector-emitter Voltage (V BE = -1.5V)              100                    V
     V CEO   Collector-emitter Voltage (I B = 0)                   80                     V
     V EBO   Emitter-base Voltage (I C = 0)                         6                     V
      IC     Collector Current                                     10                     A
     I CM    Collector Peak Current (repetitive)                   15                     A
      IB     Base Current                                           2                     A
     P tot   Total Dissipation at T c  25 o C                      60                     W
                                                                                         o
     T stg   Storage Temperature                                -65 to 175                   C
                                                                                         o
      Tj     Max. Operating Junction Temperature                   150                       C


June 1997                                                                                        1/4
BDY90P

THERMAL DATA
                                                                                                                o
  R thj-case   Thermal Resistance Junction-case                                    Max            2.08              C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)



  Symbol               Parameter                            Test Conditions                Min.   Typ.   Max.   Unit
      I CBO    Collector Cut-off              V CE =V CBO                                                 1     mA
               Current (I E = 0)
      I CEV    Collector Cut-off              V CE =V CEV                                                 1     mA
               Current (V BE = -1.5V)         T case = 150 o C
                                              V CE =V CEV                                                 3     mA
      I EBO    Emitter Cut-off Current        V EB = 6 V                                                  1     mA
               (I C = 0)
 V CEO(sus)  Collector-Emitter                I C = 100 mA                                 80                       V
             Sustaining Voltage
             (I B = 0)
  V CE(sat)    Collector-emitter              IC = 5 A              I B = 0.5 A                          0.5        V
               Saturation Voltage             I C = 10 A            IB = 1 A                             1.5        V
  V BE(sat)    Base-emitter                   IC = 5 A              I B = 0.5 A                          1.2        V
               Saturation Voltage             I C = 10 A            IB = 1 A                             1.5        V
      h FE     DC Current Gain                IC = 1 A              V CE = 2 V             30
                                              IC = 5 A              V CE = 5 V             50
                                              I C = 10 A            V CE = 5 V             20
        ft     Transition-Frequency           I C = 0.5 A           V CE = 5 V                    70            MHz
                                              f = 5 MHz
       t on    Turn-on Time                   IC = 5 A              I B1 = 0.5 A                         0.35       



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