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                                                                            BFW43

                                                    HIGH VOLTAGE AMPLIFIER

DESCRIPTION
The BFW43 is a silicon planar epitaxial PNP
transistors in Jedec TO-18 metal case. It is
designed for use in amplifiers where high voltage
and high gain are necessary. In particular, its
feature a VCEO of 150V are specified over a wide
range of curent.




                                                                   TO-18




                                                       INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
 Symbol                         Parameter                        Value          Unit
  V CBO     Collector-Base Voltage (IE = 0)                      -150               V
  V CEO     Collector-Emitter Voltage (I B = 0)                  -150               V
  V EBO     Emitter-Base Voltage (I C = 0)                         -6               V
    IC      Collector Current                                     -0.1              A
                                             o
   P t ot   Total Dissipation at T amb  25 C                      0.4               W
                              at T case  25 o C                   1.4               W
                                                                                    o
   T stg    St orage Temperature                               -55 to 200               C
                                                                                    o
    Tj      Max. Operating Junction Temperature                   200                   C


November 1997                                                                               1/5
BFW43

THERMAL DATA
                                                                                                                   o
  R t hj-ca se   Thermal Resistance Junction-Case                                      Max          125                C/W
                                                                                                                   o
  R t hj- amb    Thermal Resistance Junction-Ambient                                   Max          438                C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symb ol              Parameter                         Test Cond ition s                   Min.   Typ .   Max.   Un it
      I CBO      Collector Cut-off            V CE = -100 V                                          -0.2   -10        nA
                 Current (IE = 0)             V CE = -100 V      T a mb = 125 o C                   -0.03   -10        

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