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                                                                               BFX34

                                                       SILICON NPN TRANSISTOR
s   SGS-THOMSON PREFERRED SALESTYPE
s   NPN TRANSISTOR

DESCRIPTION
The BFX34 is a silicon epitaxial planar NPN
transistor in Jedec TO-39 metal case, intented for
high current applications.
Very low saturation voltage and high speed at
high current levels make it ideal for power drivers,
power amplifiers, switching power supplies and
relay drivers inverters.
                                                                      TO-39




                                                          INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                          Value          Unit
     V CBO   Collector-Base Voltage (I E = 0)                        120               V
     V CEO   Collector-Emitter Voltage (I B = 0)                     60                V
     V EBO   Emitter-Base Voltage (I C = 0)                           6                V
      IC     Collector Current                                        5                A
     P tot   Total Dissipation at T case  25 Co
                                                                    0.87               W
                                  T amb  25 o C                       5                W
                                                                                       o
     T stg   Storage Temperature                                  -65 to 200               C
                                                                                       o
      Tj     Max. Operating Junction Temperature                     200                   C


June 1997                                                                                      1/4
BFX34

THERMAL DATA
                                                                                                              o
  R thj-case     Thermal Resistance Junction-case                                  Max           35               C/W
                                                                                                              o
  R thj-amb      Thermal Resistance Junction-amb                                   Max          200               C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol               Parameter                            Test Conditions              Min.   Typ.   Max.   Unit
      I CES      Collector Cut-off            V CE = 60 V                                       0.02    10        

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