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                                                                             BFY50/51

                                                  MEDIUM POWER AMPLIFIER

DESCRIPTION
The BFY50 and BFY52 are silicon planar
epitaxial NPN transistors in Jedec TO-39 metal
case. They are intended for general purpose
linear and switching applications.




                                                                    TO-39




                                                      INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
 Symbol                         Parameter                         Value              Unit
                                                        BFY50                BFY51
  V CBO     Collector-Base Voltage (IE = 0)               80                  60      V
  V CEO     Collector-Emitter Voltage (I B = 0)           35                  30      V
  V EBO     Emitter-Base Voltage (I C = 0)                          6                 V
    IC      Collector Current                                       1                 A
   I CM     Collector Peak Current (tp < 5 ms)                     1.5                A
                                             o
   P t ot   Total Dissipation at T amb  25 C                       0.8                W
                              at T case  25 o C                     5                 W
                                                                                     o
   T stg    St orage Temperature                                -65 to 200               C
                                                                                     o
    Tj      Max. Operating Junction Temperature                    200                   C


November 1997                                                                                1/5
BFY50/BFY51

THERMAL DATA
                                                                                                                 o
  R t hj-ca se   Thermal Resistance Junction-Case                                    Max           35                C/W
                                                                                                                 o
  R t hj- amb    Thermal Resistance Junction-Ambient                                 Max          218                C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symb ol              Parameter                           Test Cond ition s               Min.   Typ .   Max.   Un it
      I CBO      Collector Cut-off            for BFY50
                 Current (IE = 0)             V CB = 60 V                                                 50         nA
                                                                              o
                                              V CB = 60 V       T ca s e = 100 C                          2.5        

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