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bu406-bu407d


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                                                                                      BU406D
                                                                                      BU407D

                              SILICON NPN SWITCHING TRANSISTORS
s   SGS-THOMSON PREFERRED SALESTYPES
s   NPN TRANSISTOR
s   VERY HIGH SWITCHING SPEED



APPLICATIONS:
s HORIZONTAL DEFLECTION FOR
  MONOCHROME TV                                                                           3
                                                                                      2
                                                                                  1


                                                                       TO-220

DESCRIPTION
The BU406D and BU407D are silicon planar
epitaxial NPN transistors with integrated damper
diode, in Jedec TO-220 plastic package. They
are fast switching, devices for use in horizontal
deflection output stages of MTV receivers with           INTERNAL SCHEMATIC DIAGRAM
110o CRT.
The BU406D is primarily intended for large
screen, while the BU407D is for medium and
small screens




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                            Value                   Unit
                                                           BU406D                BU407D
     V CBO   Collector-Base Voltage (I E = 0)                400                  330          V
     V CEV   Collector-Emitter Voltage (V BE = - 1.5V)       400                  330          V
     V EBO   Emitter-Base Voltage (I C = 0)                             6                      V
      IC     Collector Current                                          7                      A
     I CM    Collector Peak Current (repetitive)                       10                      A
     I CM    Collector Peak Current (t p = 10ms)                       15                      A
      IB     Base Current                                               4                      A
     P tot   Total Dissipation at T c = 25 o C                         60                      W
                                                                                              o
     T stg   Storage Temperature                                    -65 to 150                    C
                                                                                              o
      Tj     Max. Operating Junction Temperature                       150                        C

June 1997                                                                                             1/4
BU406D/BU407D

THERMAL DATA
                                                                                                                o
  R thj-case   Thermal Resistance Junction-case                                     Max           2.08              C/W
                                                                                                                o
  R thj-amb    Thermal Resistance Junction-ambient                                  Max           70                C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol               Parameter                             Test Conditions               Min.   Typ.   Max.   Unit
      I CEV    Collector Cut-off               for BU406D
               Current (V BE = - 1.5V)         V CE =400 V                                                15    mA
                                               for BU407D
                                               V CE =330 V                                                15    mA
      I EBO    Emitter Cut-off Current         V EB = 6 V                                                400    mA
               (I C = 0)
  V CE(sat)    Collector-emitter               IC = 5 A                    IB = 0.65 A                    1         V
               Saturation Voltage
  V BE(sat)    Base-emitter                    IC = 5 A                    I B = 0.65 A                  1.3        V
               Saturation Voltage
        fT     Transition-Frequency            I C = 0.5 A               V CE = 10V        10                   MHz
      t off    Turn-off Time                   IC = 5 A                 I Bend = 0.65 A                  0.75       



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