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                                                                                        BU810
                            MEDIUM VOLTAGE NPN FAST-SWITCHING
                                       DARLINGTON TRANSISTOR
s   SGS-THOMSON PREFERRED SALESTYPE
s   NPN DARLINGTON
s   LOW BASE-DRIVE REQUIREMENTS
s   FAST SWITCHING SPEED
s   INTEGRATED ANTIPARALLEL
    COLLECTOR-EMITTER DIODE

APPLICATIONS
s HORIZONTAL DEFLECTION FOR                                                         3
  MONOCHROME TVs                                                                2
                                                                            1
s GENERAL PURPOSE SWITCHING



DESCRIPTION                                                       TO-220
The BU810 is a Multiepitaxial Planar NPN
Transistor in TO-220 package. It is intended for
use in high frequency and efficency converters,
switching regulators and motor control.

                                                       INTERNAL SCHEMATIC DIAGRAM




                                                                 R = 200 




ABSOLUTE MAXIMUM RATINGS

    Symbol                       Parameter                       Value                    Unit
     V CBO   Collector-Base Voltage (I E = 0)                     600                      V
     V CEO   Collector-Emitter Voltage (I B = 0)                  400                      V
     V EBO   Emitter-Base Voltage (I C = 0)                        5                       V
      IC     Collector Current                                     7                       A
     I CM    Collector Peak Current                               10                       A
      IB     Base Current                                          2                       A
     P tot   Total Power Dissipation at T case  25 C
                                                   o
                                                                  75                       W
                                                                                           o
     T stg   Storage Temperature                               -65 to 150                      C
                                                                                           o
      Tj     Junction Temperature                                 150                          C


June 1997                                                                                          1/4
BU810

THERMAL DATA
                                                                                                               o
  R thj-case   Thermal Resistance Junction-case                                    Max           1.66              C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol               Parameter                             Test Conditions              Min.   Typ.   Max.   Unit
      I CES    Collector Cut-off               V CE = 600 V                                             200        

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