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bu208d_bu508d


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                                                     BU208D/508D/508DFI
                                     HIGH VOLTAGE FASTSWITCHING NPN
                                                  POWER TRANSISTOR

s    SGS-THOMSON PREFERRED SALESTYPES
s    HIGH VOLTAGE CAPABILITY
s    U.L. RECOGNISED ISOWATT218 PACKAGE
     (U.L. FILE # E81734 (N)
s    JEDEC TO-3 METAL CASE                                                                TO-3
s    NPN TRANSISTOR WITH INTEGRATED
     FREEWHEELING DIODE
                                                                  1
                                                                          2
APPLICATIONS:
s HORIZONTAL DEFLECTION FOR COLOUR

  TV

DESCRIPTION                                                                                                  3
                                                                           3
The BU208D, BU508D and BU508DFI are                                   2                               2
manufactured     using    Multiepitaxial  Mesa       TO-218      1             ISOWATT218        1
technology for cost-effective high performance
and uses a Hollow Emitter structure to enhance
switching speeds.
                                                      INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symb ol                        Parameter                          Valu e                         Unit
     V CES    Collector-Emitter Voltage (V BE = 0)                    1500                            V
     V CEO    Collector-Emitter Voltage (I B = 0)                      700                            V
     V EBO    Emitter-Base Voltage (I C = 0)                              10                          V
       IC     Collector Current                                           8                           A
      I CM    Collector Peak Current (tp < 5 ms)                          15                          A
                                                      TO - 3    TO - 218        ISOW ATT218
      P tot   T otal Dissipation at T c = 25 o C        150          125            50                W
                                                                                                     o
     T s tg   Storage Temperature                    -65 to 150 -65 to 150       -65 to 150              C
                                                                                                     o
       Tj     Max. O perating Junction Temperature      150          150            150                  C


June 1996                                                                                                    1/8
BU208D/508D/508DFI

THERMAL DATA
                                                                                  TO-3     T O-218   ISOW AT T218
                                                                                                                          o
  R thj -ca se   Thermal Resistance Junction-case                           Max        1     1               2.5              C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbo l              Parameter                            T est Con ditio ns              Min .    T yp.         Max.   Unit
      I CES      Collector Cut-off            V CE = 1500 V                                                         1     mA
                                                                                       o
                 Current (V BE = 0)           V CE = 1500 V                 T j = 125 C                             2     mA
      I EBO      Emitter Cut- off Current     V EB = 5 V                                                           300    mA
                 (I C = 0)
  V CE(sat)      Collector-Emitter            I C = 4.5 A                   IB = 2 A                                1         V
                 Saturation Voltage
  VCEO(s us)     Collector-Emitter            I C = 100 m A                                  700                              V
                 Sustaining Voltage
  V BE(sat )     Base-Emitter                 I C = 4.5 A                   IB = 2 A                               1.3        V
                 Saturation Voltage
                 INDUCT IVE LOAD              I C = 4.5 A hF E = 2.5 V CC = 140 V
       ts        Storage Time                 LC = 0.9 mH LB = 3 



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