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                                                                              BU326A

        HIGH VOLTAGE NPN SILICON POWER TRANSISTOR
s   SGS-THOMSON PREFERRED SALESTYPE
s   NPN TRANSISTOR
s   FAST SWITCHING SPEED

APPLICATIONS:
s POWER SUPPLIES
s LINEAR AND SWITCHING INDUSTRIAL

  EQUIPMENT
                                                                  1
                                                                          2
DESCRIPTION
The BU326A is a silicon multiepitaxial mesa NPN                        TO-3
transistor in Jedec TO-3 metal case particularly
intended for switch-mode CTV supply system.




                                                         INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                         Value          Unit
     V CES   Collector-Emitter Voltage (V BE = 0)                   900               V
     V CEO   Collector-Emitter Voltage (I B = 0)                    400               V
     V EBO   Emitter-Base Voltage (I C = 0)                           10              V
      IC     Collector Current                                        6               A
     I CM    Collector Peak Current                                   8               A
      IB     Base Current                                             3               A
     P tot   Total Power Dissipation at T case  25 o C                75              W
                                                                                      o
     T stg   Storage Temperature                                 -65 to 200               C
                                                                                      o
      Tj     Max. Operating Junction Temperature                    200                   C




June 1997                                                                                     1/4
BU326A

THERMAL DATA
                                                                                                             o
  R thj-case   Thermal Resistance Junction-case                                   Max          2.33              C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol                 Parameter                          Test Conditions             Min.   Typ.   Max.   Unit
      I CES    Collector Cut-off Current         V CE = 900 V                                          1         mA
                                                                           o
               (V BE = 0)                        V CE = 900 V    T c = 125 C                           2         mA
      I EBO    Emitter Cut-off Current           V EB = 10 V                                           10        mA
               (I C = 0)
 V CEO(sus)  Collector-Emitter           I C = 100 mA                                   400                      V
             Sustaining Voltage(I B = 0)
  V CE(sat)    Collector-Emitter                 I C = 2.5 A       I B = 0.5 A                        1.5        V
               Saturation Voltage                IC = 4 A          IB = 1.25 A                         3         V
  V BE(sat)    Base-Emitter Saturation           I C = 2.5 A       I B = 0.5 A                        1.4        V
               Voltage                           IC = 4 A          I B = 1.25 A                       1.6
      h FE     DC Current Gain                   IC = 1 A        V CE = 5 V                     25
       t on    Turn-on Time                      I C = 2.5 A      I B1 = 0.5 A                        0.5        

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