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                                                                              BUT100

                            HIGH POWER NPN SILICON TRANSISTOR
s   SGS-THOMSON PREFERRED SALESTYPE
s   NPN TRANSISTOR
s   HIGH CURRENT CAPABILITY
s   FAST SWITCHING SPEED
s   HIGH RUGGEDNESS

APPLICATION
s MOTOR CONTROL
s UNINTERRUPTABLE POWER SUPPLY
                                                                 1
                                                                         2
DESCRIPTION
The BUT100 is a Multiepitaxial Planar NPN
Transistor in TO-3 package. It is intended for use                   TO-3
in high frequency and efficency converters,                     (version " S ")
switching regulators and motor control.




                                                        INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                        Value           Unit
     V CEV   Collector-Emitter Voltage (V BE = -1.5V)              200               V
     V CEO   Collector-Emitter Voltage (I B = 0)                   125               V
     V EBO   Emitter-Base Voltage (I C = 0)                          7               V
      IE     Emitter Current                                         50              A
     I EM    Emitter Peak Current                                  150               A
      IB     Base Current                                            10              A
     I BM    Base Peak Current                                       30              A
     P tot   Total Dissipation at T c < 25 o C                     300               W
                                                                                     o
     T stg   Storage Temperature                                -65 to 200               C
                                                                                     o
      Tj     Max. Operating Junction Temperature                   200                   C


April 1997                                                                                   1/4
BUT100

THERMAL DATA
                                                                                                                         o
  R thj-case     Thermal Resistance Junction-case                                            Max           0.58              C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol               Parameter                              Test Conditions                       Min.   Typ.   Max.   Unit
      I CER      Collector Cut-off            V CE = V CEV                                                         1     mA
                                                                               o
                 Current (R BE = 5)           V CE = V CEV          T C = 100 C                                    5     mA
      I CEV      Collector Cut-off            V CE = V CEV V BE = -1.5V                                            1     mA
                 Current                      V CE = VCEV V BE = -1.5V TC = 100 o C                                4     mA
      I EBO      Emitter Cut-off Current      V EB = 5 V                                                           1     mA
                 (I C = 0)
 V CEO(sus)  Collector-Emitter                I C = 0.2 A                                           125                      V
             Sustaining Voltage               L = 25mH
      V EBO      Emitter-Base Voltage         I E = 50mA                                             7                       V
                 (I C = 0)
  V CE(sat)      Collector-Emitter            IC   =   50A     IB   =   2.5A                                      0.9        V
                 Saturation Voltage           IC   =   100A    IB   =   10A                                       0.9        V
                                              IC   =   50A     IB   =   2.5A       T j = 100 o C                  1.2        V
                                              IC   =   100A    IB   =   10A        T j = 100o C                   1.5        V
  V BE(sat)      Base-Emitter                 IC   =   50A     IB   =   2.5A                                      1.4        V
                 Saturation Voltage           IC   =   100A    IB   =   10A                                        2         V
                                              IC   =   50A     IB   =   2.5A       T j = 100 o C                  1.4        V
                                                                                            o
                                              IC   =   100A    IB   =   10A        T j = 100 C                    2.1        V
      di c /dt   Rate of Rise of              V CC = 100V R C = 0                  I B1 = 5A        180                  A/

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