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                                                                              BUT100

                              HIGH POWER NPN SILICON TRANSISTOR

n    HIGH EFFICIENCY SWITCHING
n    VERY LOW SATURATION VOLTAGE
n    RECTANGULAR SAFE OPERATION AREA
n    WIDE ACCIDENTAL OVERLOAD AREA

DESCRIPTION
Suitable for motor drivers, SMPS converters,
uninterruptable power supply operating low
voltage supply.                                                   1
                                                                          2

                                                                       TO-3




                                                         INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symb ol                       Parameter                        Valu e         Unit
     V CEV    Collector-Emitter Voltage (V BE = -1.5V)              200               V
     V CEO    Collector-Emitter Voltage (I B = 0)                   125               V
     V EBO    Emitter-Base Voltage (I C = 0)                          7               V
       IE     Emitter Current                                         50              A
      I EM    Emitter Peak Current                                  150               A
       IB     Base Current                                            10              A
      I BM    Base Peak Current                                       30              A
                                           o
      P tot   T otal Dissipation at T c < 25 C                      300               W
                                                                                      o
     T s tg   Storage Temperature                                -65 to 200               C
                                                                                      o
       Tj     Max. O perating Junction Temperature                  200                   C



October 1995                                                                                  1/4
BUT100

THERMAL DATA
                                                                                                                      o
  R thj -ca se   Thermal Resistance Junction-case                                       Max            0.58               C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbo l              Parameter                              T est Con ditio ns               Min .   T yp.   Max.   Unit
      I CER      Collector Cut-off            V CE = V CEV                                                      1     mA
                 Current (R BE = 5)           V CE = V CEV           T C= 100 o C                               5     mA
      I CEV      Collector Cut-off            V CE = V CEV V BE = -1.5V                                         1     mA
                                                                                o
                 Current                      V CE = V CEV V BE = -1.5V TC = 100 C                              4     mA
      I EBO      Emitter Cut- off Current     V EB = 5 V                                                        1     mA
                 (I C = 0)
 V CEO(sus)  Collector-Emitter                I C = 0.2mA                                      125                        V
             Sustaining Voltage               L = 25mH
      V EBO      Emitter-Base Voltage         I E = 50mA                                        7                         V
                 (I C = 0)
  V CE(sat)      Collector-Emitter            IC   =   50A      IB   =   2.5A                                  0.9        V
                 Saturation Voltage           IC   =   100A     IB   =   10A                                   0.9        V
                                              IC   =   50A      IB   =   2.5A   Tj = 100 o C                   1.2        V
                                                                                        o
                                              IC   =   100A     IB   =   10A    Tj = 100 C                     1.5        V
  V BE(sat )     Base-Emitter                 IC   =   50A      IB   =   2.5A                                  1.4        V
                 Saturation Voltage           IC   =   100A     IB   =   10A                                    2         V
                                                                                         o
                                              IC   =   50A      IB   =   2.5A   Tj = 100 C                     1.4        V
                                                                                        o
                                              IC   =   100A     IB   =   10A    Tj = 100 C                     2.1        V
      di c/dt    Rate of Rise of              VCC = 100V R C = 0                I B1 = 5A      180                    A/



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