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but11a


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                                                                                BUT11A
                                           HIGH VOLTAGE FAST-SWITCHING
                                                 NPN POWER TRANSISTOR
s    SGS-THOMSON PREFERRED SALESTYPE
s    NPN TRANSISTOR
s    HIGH VOLTAGE CAPABILITY
s    FAST SWITCHING SPEED



APPLICATIONS:
s FLYBACK AND FORWARD SINGLE                                                        3
  TRANSISTOR LOW POWER CONVERTERS                                               2
                                                                            1


                                                                   TO-220


DESCRIPTION
The BUT11A is a silicon multiepitaxial mesa NPN
transistor in Jedec TO-220 plastic package,
particularly intended for switching application.
                                                       INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                       Value                  Unit
     V CES    Collector-Emitter Voltage (V BE = 0 V)              1000                    V
     V CEO    Collector-Emitter Voltage (I B = 0)                 450                     V
     V EBO    Emitter-Base Voltage (I C = 0)                        9                     V
        IC    Collector Current                                     5                     A
      I CM    Collector Peak Current                               10                     A
        IB    Base Current                                          2                     A
      I BM    Base Peak Current                                     4                     A
      P tot   Total Power Dissipation at T c  25 o C               83                    W
                                                                                         o
      T stg   Storage Temperature                              -65 to 150                  C
                                                                                         o
        Tj    Max. Operating Junction Temperature                 150                      C



June 1997                                                                                  1/4
BUT11A

THERMAL DATA
                                                                                                               o
  R thj-case   Thermal Resistance Junction-case                                     Max          1.5               C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol               Parameter                               Test Conditions            Min.   Typ.   Max.   Unit
      I CES    Collector Cut-off               V CE = rated V CES                                        1     mA
                                                              o
               Current (V BE = 0)              at T case = 125 C                                         2     mA
      I EBO    Emitter Cut-off Current         IC = 0                     V BE = 9 V                     10    mA
 V CEO(sus)* Collector-emitter                 I B (off) = 0               I C = 100 mA   450                      V
             Sustaining Voltage
  V CE(sat)*   Collector-emitter               I C = 2.5 A                 I B = 0.5 A                  1.5        V
               Saturation Voltage
  V BE(sat)*   Base-emitter                    I C = 2.5 A                 I B = 0.5 A                  1.3        V
               Saturation Voltage
      t on     Turn on Time                    I C = 2.5 A               V CC = 250 V                    1         



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