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but232


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                                                                            BUT232V

                                          NPN TRANSISTOR POWER MODULE

s    HIGH CURRENT POWER BIPOLAR MODULE
s    VERY LOW Rth JUNCTION CASE
s    SPECIFIED ACCIDENTAL OVERLOAD
     AREAS
s    ISOLATED CASE (2500V RMS)
s    EASY TO MOUNT
s    LOW INTERNAL PARASITIC INDUCTANCE

INDUSTRIAL APPLICATIONS:
s MOTOR CONTROL
s SMPS & UPS

s DC/DC & DC/AC CONVERTERS

                                                                  ISOTOP




                                                       INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                         Parameter                     Value          Unit
     VCEV     Collector-Emitter Voltage (VBE = -5 V)              400               V
    VCEO(sus) Collector-Emitter Voltage (IB = 0)                  300               V
     VEBO     Emitter-Base Voltage (I C = 0)                       7                V
       IC     Collector Current                                   140               A
      ICM     Collector Peak Current (t p = 10 ms)                210               A
       IB     Base Current                                        28                A
      I BM    Base Peak Current (t p = 10 ms)                     42                A
      Pt ot   Tot al Dissipation at T c = 25 o C                  300               W
                                                                                    o
      T stg   Storage Temperature                              -55 to 150               C
                                                                                    o
       Tj     Max. Ope rating Junction Temperature                150                   C
                                                                                    o
      VI SO   Insulation Withstand Voltage (AC-RMS)              2500                   C

September 1997                                                                              1/7
BUT232V

THERMAL DATA
                                                                                                                        o
  R thj-ca se   Thermal Resistance Junction-case                                             Max          0.41              C/W
   R t hc-h     Thermal Resistance Case-heatsink With Conductive
                                                                                                                        o
                Grease Applied                                                               Max          0.05              C/W

                                                                        o
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
  Symbol               Parameter                                  Test Conditions                  Min.   Typ.   Max.   Unit
      I CER     Collecto r Cut-of f           VCE = VCEV                                                          1     mA
                Current (RBE = 5 )            VCE = VCEV                T j = 100 o C                             5     mA
       ICEV     Collecto r Cut-of f           VCE = VCEV                                                          1     mA
                Current (VBE = -1.5)          VCE = VCEV                T j = 100 o C                             4     mA
      I EBO     Emitter Cut-off Current VEB = 5 V                                                                 1     mA
                (I C = 0)
VCEO(SUS) * Collecto r-Emitter                I C = 0.2 A   L = 25 mH                              300                      V
            Sustaining Voltage                Vc lamp = 300 V
      hFE       DC Current Gain               I C = 70 A           VCE = 5 V                              17
  V CE(sat )    Collecto r-Emitter            IC     =   35   A    IB   =   1.7 5 A                       0.5               V
                Saturation Voltage            IC     =   35   A    IB   =   1.7 5 A Tj = 100 o C          0.7    1. 9       V
                                              IC     =   70   A    IB   =   7A                            0.5               V
                                              IC     =   70   A    IB   =   7 A T j = 100 o C             0.9    1. 9       V
  VBE( sat)     Base-Emitter                  I C = 70 A           IB = 7 A                               1.1               V
                Saturation Voltage            I C = 70 A           IB = 7 A       Tj = 100 o C             1     1. 3       V
      diC /dt   Rate of Rise of               VCC = 300 V RC = 0                     tp = 3 



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