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but32v


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                                                                                     BUT32V

                                          NPN TRANSISTOR POWER MODULE

s    HIGH CURRENT POWER BIPOLAR MODULE
s    VERY LOW Rth JUNCTION CASE
s    SPECIFIED ACCIDENTAL OVERLOAD
     AREAS
s    ISOLATED CASE (2500V RMS)
s    EASY TO MOUNT
s    LOW INTERNAL PARASITIC INDUCTANCE

INDUSTRIAL APPLICATIONS:
s MOTOR CONTROL
                                                               Pin 4 not connected
s SMPS & UPS

s DC/DC & DC/AC CONVERTERS




                                                                   ISOTOP




                                                       INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                         Parameter                     Value                  Unit
     VCEV     Collector-Emitter Voltage (VBE = -5 V)               400                   V
    VCEO(sus) Collector-Emitter Voltage (IB = 0)                   300                   V
     VEBO     Emitter-Base Voltage (I C = 0)                        7                    V
       IC     Collector Current                                    80                    A
      ICM     Collector Peak Current (t p = 10 ms)                 120                   A
       IB     Base Current                                         16                    A
      I BM    Base Peak Current (t p = 10 ms)                      24                    A
      Pt ot   Tot al Dissipation at T c = 25 o C                   250                   W
                                                                                         o
      T stg   Storage Temperature                              -55 to 150                    C
                                                                                         o
       Tj     Max. Ope rating Junction Temperature                 150                       C
                                                                                         o
      VI SO   Insulation Withstand Voltage (AC-RMS)               2500                       C

September 1997                                                                                   1/7
BUT32V

THERMAL DATA
                                                                                                               o
  R thj-ca se   Thermal Resistance Junction-case                                    Max          0.5               C/W
   R t hc-h     Thermal Resistance Case-heatsink With Conductive
                                                                                                               o
                Grease Applied                                                      Max          0.05              C/W

                                                              o
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
  Symbol               Parameter                           Test Conditions                Min.   Typ.   Max.   Unit
      I CER     Collecto r Cut-of f           VCE = VCEV                                                 1     mA
                Current (RBE = 5 )            VCE = VCEV      T j = 100 o C                              5     mA
       ICEV     Collecto r Cut-of f           VCE = VCEV                                                 1     mA
                Current (VBE = -5)            VCE = VCEV      T j = 100 o C                              4     mA
      I EBO     Emitter Cut-off Current VEB = 5 V                                                        1     mA
                (I C = 0)
VCEO(SUS) * Collecto r-Emitter                I C = 0.2 A   L = 25 mH                     300                      V
            Sustaining Voltage                Vc lamp = 300 V
      hFE       DC Current Gain               I C = 40 A    VCE = 5 V                            16
  V CE(sat )    Collecto r-Emitter            I C = 40 A    IB = 4 A                             0.6    0. 9       V
                Saturation Voltage            I C = 40 A    IB = 4 A    T j = 100 o C            1.2    1. 9       V
  VBE( sat)     Base-Emitter                  I C = 40 A    IB = 4 A                             1.12   1. 3       V
                Saturation Voltage            I C = 40 A    IB = 4 A    T j = 100 o C            1.1    1. 3       V
      diC /dt   Rate of Rise of               VCC = 300 V RC = 0            tp = 3 



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