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but70


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                                                                                         BUT70

                               HIGH POWER NPN SILICON TRANSISTOR
s   SGS-THOMSON PREFERRED SALESTYPE
s   NPN TRANSISTOR
s   HIGH CURRENT CAPABILITY
s   FAST SWITCHING SPEED
s   VERY LOW SATURATION VOLTAGE AND
    HIGH GAIN

APPLICATION
s SWITCHING REGULATORS                                                                   3
                                                                                     2
s MOTOR CONTROL
                                                                                 1
s HIGH FREQUENCY AND EFFICENCY

  CONVERTERS
                                                                        TO-218
DESCRIPTION
The BUT70 is a Multiepitaxial planar NPN
transistor in TO-218 plastic package.
It's intented for use in high frequency and
efficiency converters such us motor controllers
and industrial equipment.                                   INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                         Parameter                          Value                  Unit
     V CEV     Collector-emitter Voltage (V BE = -1.5V)                200                    V
     V CEO     Collector-emitter Voltage (I B = 0)                     125                    V
     V EBO     Emitter-Base Voltage (I C = 0)                           7                     V
    I E(RMS)   Emitter Current                                         40                     A
      I EM     Emitter Peak Current                                    120                    A
      IB       Base Current                                             8                     A
      I BM     Base Peak Current                                       24                     A
     P tot     Total Power Dissipation at T case < 25 o C              200                    W
                                                                                             o
     T stg     Storage Temperature                                  -65 to 150                   C
                                                                                             o
      Tj       Max Operating Junction Temperature                      150                       C


July 1997                                                                                            1/4
BUT70

THERMAL DATA
                                                                                                                             o
  R thj-case     Thermal Resistance Junction-case                                               Max            0.63              C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol                Parameter                                 Test Conditions                       Min.   Typ.   Max.   Unit
       I CER     Collector Cut-off            V CE = V CEV                                                             1     mA
                                                                                  o
                 Current (R BE = 5)           V CE = V CEV               T c = 100 C                                   5     mA
       I CEV     Collector Cut-off            V CE = V CEV          V BE = -1.5V                                       1     mA
                                                                                          o
                 Current                      V CE = V CEV          V BE = - 1.5V T C =100 C                           4     mA
       I EBO     Emitter Cut-off              V EB = - 5 V                                                             1     mA
                 Current (I C = 0)
 V CEO(sus)  Collector-Emitter                I C = 0.2A                                                125                      V
             Sustaining Voltage               L = 25 mH
      V EBO      Emitter-base                 I E = 50 mA                                                7                       V
                 Voltage (I C = 0)
  V CE(sat)      Collector-Emitter            IC     =   70   A     IB   =   7A                                       0.9        V
                 Saturation Voltage           IC     =   70   A     IB   =   7A        T j = 100 o C                  1.5        V
                                              IC     =   35   A     IB   =   1.75 A                                   0.9        V
                                              IC     =   35   A     IB   =   1.75 A    T j = 100 o C                  1.2        V
  V BE(sat)      Base-Emitter                 IC     =   70   A     IB   =   7A                                       1.8        V
                 Saturation Voltage           IC     =   70   A     IB   =   7A        T j = 100 o C                  1.9        V
                                              IC     =   35   A     IB   =   1.75 A                                   1.4        V
                                                                                                   o
                                              IC     =   35   A     IB   =   1.75 A     Tj = 100 C                    1.4        V
      dic /dt    Rated of Rise of             V CC = 100 V               RC = 0       I B1 = 3.5 A      140                  A/



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