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buv298a


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                                                                           BUV298AV

                                          NPN TRANSISTOR POWER MODULE

s    HIGH CURRENT POWER BIPOLAR MODULE
s    VERY LOW Rth JUNCTION CASE
s    SPECIFIED ACCIDENTAL OVERLOAD
     AREAS
s    ISOLATED CASE (2500V RMS)
s    EASY TO MOUNT
s    LOW INTERNAL PARASITIC INDUCTANCE

INDUSTRIAL APPLICATIONS:
s MOTOR CONTROL
                                                               Pin 4 not connected
s SMPS & UPS

s WELDING EQUIPMENT




                                                                   ISOTOP




                                                       INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                         Parameter                     Value               Unit
     VCEV     Collector-Emitter Voltage (VBE = -5 V)              1000                V
    VCEO(sus) Collector-Emitter Voltage (IB = 0)                   450                V
     VEBO     Emitter-Base Voltage (I C = 0)                        7                 V
       IC     Collector Current                                    50                 A
      ICM     Collector Peak Current (t p = 10 ms)                 75                 A
       IB     Base Current                                         10                 A
      I BM    Base Peak Current (t p = 10 ms)                      16                 A
      Pt ot   Tot al Dissipation at T c = 25 o C                   250                W
                                                                                     o
      T stg   Storage Temperature                              -55 to 150                C
                                                                                     o
       Tj     Max. Ope rating Junction Temperature                 150                   C
                                                                                     o
      VI SO   Insulation Withstand Voltage (AC-RMS)               2500                   C

September 1997                                                                               1/7
BUV298AV

THERMAL DATA
                                                                                                               o
  R thj-ca se   Thermal Resistance Junction-case                                    Max          0.5               C/W
   R t hc-h     Thermal Resistance Case-heatsink With Conductive
                                                                                                               o
                Grease Applied                                                      Max          0.05              C/W

                                                               o
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
  Symbol               Parameter                           Test Conditions                Min.   Typ.   Max.   Unit
      I CER     Collecto r Cut-of f           VCE = VCEV                                                0. 4   mA
                Current (RBE = 5 )            VCE = VCEV       T j = 100 o C                             2     mA
       ICEV     Collecto r Cut-of f           VCE = VCEV                                                0. 4   mA
                Current (VBE = -5V)           VCE = VCEV       T j = 100 o C                             2     mA
      I EBO     Emitter Cut-off Current VEB = 5 V                                                        2     mA
                (I C = 0)
VCEO(SUS) * Collecto r-Emitter                I C = 0.2 A   L = 25 mH                     450                      V
            Sustaining Voltage                Vc lamp = 450 V
      hFE       DC Current Gain               I C = 32 A    VCE = 5 V                            12
  V CE(sat )    Collecto r-Emitter            I C = 32 A    IB = 6.4 A                           0.35   1. 2       V
                Saturation Voltage            I C = 32 A    IB = 6.4 A     T j = 100 oC          0.6     2         V
  VBE( sat)     Base-Emitter                  I C = 32 A    IB = 6.4 A                            1     1. 5       V
                Saturation Voltage            I C = 32 A    IB = 6.4 A     T j = 100 oC          0.9    1. 5       V
      diC /dt   Rate of Rise of               VCC = 300 V RC = 0        tp = 3 



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