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buv42


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                                                                              BUV42

                                   SILICON NPN SWITCHING TRANSISTOR

n    SGS-THOMSON PREFERRED SALESTYPE

n    FAST SWITCHING TIMES
n    LOW SWITCHING LOSSES
n    VERY LOW SATURATION VOLTAGE AND
     HIGH GAIN FOR REDUCED LOAD
     OPERATION
                                                                  1
                                                                          2

                                                                       TO-3




                                                         INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symb ol                        Parameter                       Valu e         Unit
     V CEV     Collector-emitter Voltage (VBE = -1.5V)              350               V
     V CEO     Collector-emitter Voltage (IB = 0)                   250               V
     V EBO     Emitter-Base Voltage (IC = 0)                          7               V
       IC      Collector Current                                      12              A
      I CM     Collector Peak Current                                 18              A
       IB      Base Current                                           2.5             A
      I BM     Base Peak Current                                      4               A
     P Bas e   Reverse Bias Base Dissipation                          1               A
               (B. E. junction in avalanche)
                                               o
      P tot    T otal Dissipation at Tc ase  25 C                   120               W
                                                                                      o
      T s tg   Storage Temperature                               -65 to 200               C
                                                                                      o
       Tj      Max Operating Junction Temperature                   200                   C



October 1995                                                                                  1/5
BUV42

THERMAL DATA
                                                                                                                        o
  R thj -ca se   Thermal Resistance Junction-case                                       Max              1.46               C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbo l               Parameter                           T est Con ditio ns                   Min .   T yp.   Max.   Unit
      I CER      Collector Cut-off            V CE = V CEV                                                       0.5    mA
                 Current (R BE = 10)          V CE = V CEV         Tc = 100o C                                   2.5    mA
      I CEV      Collector Cut-off            V CE = V CEV     V BE = -1.5V                                      0.5    mA
                                                                                    o
                 Current                      V CE = V CEV     V BE = - 1.5V T C=100 C                            2     mA
      I EBO      Emitter Cut- off             V EB = 5 V                                                          1     mA
                 Current (I C = 0)
 V CEO(sus)  Collector-Emitter                I C = 0.2A                                         250                        V
             Sustaining Voltage               L = 25 mH
      V EB0      Emitter-base                 I E = 50 mA                                         7                         V
                 Voltage (Ic = 0)
  V CE(sat)      Collector-Emitter            IC   =   2A     IB   =   0.13A                             0.25    0.8        V
                 Saturation Voltage           IC   =   4A     IB   =   0.4A                               0.4    0.9        V
                                              IC   =   6A     IB   =   0.75A                              0.5    1.2        V
                                                                                           o
                                              IC   =   2A     IB   =   0.13A     T j = 100 C             0.25    0.9        V
                                                                                          o
                                              IC   =   4A     IB   =   0.4A      Tj = 100 C              0.45    1.2        V
                                                                                          o
                                              IC   =   6A     IB   =   0.75A     T j = 100 C              0.6    1.5        V
  V BE(sat )     Base-Emitter                 IC   =   4A     IB   =   0.4A                               1      1.3        V
                 Saturation Voltage           IC   =   6A     IB   =   0.75A                             1.1     1.5        V
                                                                                           o
                                              IC   =   4A     IB   =   0.4A      Tj = 100 C              0.9     1.3        V
                                              IC   =   6A     IB   =   0.75A     T j = 100 o C           1.1     1.5        V
   di c /dt      Rated of Rise of             V CC = 200V          RC = 0        IB1 = 0.6A
                                                                                         o
                 on-state Collector                                              T j = 25 C       25      40            A/



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