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buv50


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                                                                                BUV50

                              HIGH POWER NPN SILICON TRANSISTOR
s   SGS-THOMSON PREFERRED SALESTYPE
s   NPN TRANSISTOR
s   HIGH CURRENT CAPABILITY
s   FAST SWITCHING SPEED
s   FULLY CHARACTERISED AT 125oC

APPLICATION
s SWITCHING REGULATORS
s MOTOR CONTROL                                                     1
                                                                            2
DESCRIPTION
The BUV50 is a Multiepitaxial planar NPN
transistor in TO-3 metal case.                                           TO-3
It's intented for use in high frequency and
efficiency converters such us motor controllers
and industrial equipment.


                                                           INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                         Parameter                         Value          Unit
     V CEV     Collector-Emitter Voltage (V BE = -1.5V)               250               V
     V CEO     Collector-Emitter Voltage (I B = 0)                    125               V
     V EBO     Emitt er-Base Voltage (IC = 0)                           7               V
       IC      Collector Current                                        25              A
      I CM     Collector Peak Current                                   50              A
       IB      Base Current                                             6               A
      I BM     Base Peak Current                                        12              A
               Reverse Bias Base Power Dissipation
     P Base                                                             2               W
               (B.E. junction in avalance)
      P t ot   Total Power Dissipation at T case  25 o C              150               W
                                                                                        o
     T stg     Storage T emperature                                -65 to 200               C
                                                                                        o
       Tj      Max Operating Junction T emperature                    150                   C



April 1997                                                                                      1/5
BUV50

THERMAL DATA
                                                                                                                         o
  R t hj-ca se   Thermal Resistance Junction-case                                         Max             1.17               C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symb ol               Parameter                            Test Cond ition s                     Min.   Typ .   Max.   Un it
                 Collector Cut-off            V CE = V CEV                                                         1     mA
       I CER                                                                   o
                 Current (R BE = 10)          V CE = V CEV          T c = 100 C                                    5     mA
                 Collector Cut-off            V CE = V CEV      V BE = - 1.5V                                      1     mA
       I CEV                                                                         o
                 Current                      V CE = V CEV      V BE = - 1.5V T C=100 C                            5     mA
                 Emitter Cut-off
       I EBO                                  V EB = 5 V                                                           1     mA
                 Current (IC = 0)
                 Collector-Emitter            I C = 0.2A
 V CEO(sus )                                                                                       125                       V
                 Sustaining Voltage           L = 25 mH
                 Emitter-base
       V EB0                                  I E = 50 mA                                           7                        V
                 Voltage (Ic = 0)
                                              IC   =   10A     IB   =   0.5A                               0.4    0.8        V
                                              IC   =   20A     IB   =   2A                                 0.6    0.9        V
                 Collector-Emitter
                                              IC   =   24A     IB   =   3A                                 0.7    1.2        V
  V CE(sat )     Saturation Voltage
                                              IC   =   10A     IB   =   0.5A       Tj = 100 o C            0.5    0.9        V
                                                                                             o
                                              IC   =   20A     IB   =   2A         T j = 100 C            0.75    1.5        V
                                              IC   =   24A     IB   =   3A         T j = 100 oC            0.9    1.8        V
                                              IC   =   20A     IB   =   2A                                1.25    1.6        V
                 Base-Emitter                 IC   =   24A     IB   =   3A                                1.35    1.7        V
  V BE(s at)                                                                                 o
                 Saturation Voltage           IC   =   20A     IB   =   2A         T j = 100 C            1.25    1.7        V
                                                                                            o
                                              IC   =   24A     IB   =   3A         T j = 100 C            1.45    1.9        V
                 Rate of Rise of              V CC = 100V I B1 = 3A                R C =0
      dic /dt    on-st ate Collect or                                              T j = 25o C     50     100            A/



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