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BUV60
SILICON NPN SWITCHING TRANSISTOR
n SGS-THOMSON PREFERRED SALESTYPE
n FAST SWITCHING TIMES
n LOW SWITCHING LOSSES
n VERY LOW SATURATION VOLTAGE AND
HIGH GAIN FOR REDUCED LOAD
OPERATION
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Valu e Unit
V CEV Collector-emitter Voltage (VBE = -1.5V) 250 V
V CEO Collector-emitter Voltage (IB = 0) 125 V
V EBO Emitter-Base Voltage (IC = 0) 7 V
IC Collector Current 50 V
I CM Collector Peak Current 80 V
IB Base Current 10 A
I BM Base Peak Current 18 A
P Bas e Reverse Bias Base Dissipation 3 A
(B. E. junction in avalanche)
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P tot T otal Power Dissipation at Tc ase 25 C 250 W
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T s tg Storage Temperature -65 to 200 C
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Tj Max Operating Junction Temperature 200 C
October 1995 1/5
BUV60
THERMAL DATA
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R thj -ca se Thermal Resistance Junction-case Max 0.7 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l Parameter T est Con ditio ns Min . T yp. Max. Unit
I CER Collector Cut-off V CE = V CEV 1 mA
Current (R BE = 10) V CE = V CEV Tc = 100o C 5 mA
I CEV Collector Cut-off V CE = V CEV V BE = -1.5V 1 mA
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Current V CE = V CEV V BE = - 1.5V T C=100 C 4 mA
I EBO Emitter Cut- off V EB = 5 V 1 mA
Current (I C = 0)
V CEO(sus) Collector-Emitter I C = 0.2A 125 V
Sustaining Voltage L = 25 mH
V EB0 Emitter-base I E = 50 mA 7 V
Voltage (Ic = 0)
V CE(sat) Collector-Emitter IC = 25A IB = 1.25A 0.45 0.9
Saturation Voltage IC = 50A IB = 5A 0.65 0.9 V
IC = 60A IB = 7.5A 0.75 1.2 V
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IC = 25A IB = 1.25A T j = 100 C 0.45 1.2 V
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IC = 50A IB = 5A Tj = 100 C 0.7 1.5 V
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IC = 60A IB = 7.5A T j = 100 C 0.9 1.8 V
V BE(sat ) Base-Emitter IC = 50A IB = 5A 1.4 1.6 V
Saturation Voltage IC = 60A IB = 7.5A 1.55 1.8 V
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IC = 50A IB = 5A T j = 100 C 1.45 1.7 V
IC = 60A IB = 7.5A Tj = 100 o C 1.65 1.9 V
di c /dt Rated of Rise of V CC = 100V RC = 0 IB1 = 7.5A
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on-state Collector T j = 25 C 100 160 A/◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo