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buv98v


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                                                                                   BUV98V

                                         NPN TRANSISTOR POWER MODULE

s    HIGH CURRENT POWER BIPOLAR MODULE
s    VERY LOW Rth JUNCTION CASE
s    SPECIFIED    ACCIDENTAL    OVERLOAD
     AREAS
                                                                               4
s    ISOLATED CASE (2500V RMS)
                                                                                   3
s    EASY TO MOUNT
s    LOW INTERNAL PARASITIC INDUCTANCE
                                                             1
INDUSTRIAL APPLICATIONS:                                            2
s MOTOR CONTROL
s SMPS & UPS
s WELDING EQUIPMENT                                              Pin 4 not connected


                                                                        ISOTOP




                                                        INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS

    Symbol                         Parameter                        Value              Unit
      VC EV   Collector-Emitter Voltage (V BE = -5 V)                   850             V
    V CEO(sus) Collector-Emitter Voltage (I B = 0)                      450             V
      V EBO   Emitter-Base Voltage (IC = 0)                              7              V
       IC     Collector Current                                          30             A
      I CM    Collector Peak Current (t p = 10 ms)                       60             A
       IB     Base Current                                               8              A
       IB M   Base Peak Current (tp = 10 ms)                             30             A
      P tot   Total Dissipation at Tc = 25 o C                          150             W
                                                                                       o
      T stg   Storage Temperature                                 -55 to 150               C
                                                                                       o
       Tj     Max. Operating Junction Temperature                       150                C
      V ISO   Insulation Withstand Voltage (AC-RMS)                     2500            V


January 1995                                                                                   1/7
BUV98V

THERMAL DATA
                                                                                                           o
  R thj-cas e    Thermal Resistance Junction-case                               Max          0.83              C/W
   R thc-h       Thermal Resistance Case-heatsink With Conductive
                                                                                                           o
                 Grease Applied                                                 Max          0.05              C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

  Symbol               Parameter                        Test Conditions               Min.   Typ.   Max.   Unit
       IC ER     Collector Cut-off         V CE = V CEV                                              1     mA
                 Current (R BE = 5 )       V CE = V CEV      Tj = 100 o C                            8     mA
       I CE V    Collector Cut-off         V CE = V CEV                                             0.4    mA
                 Current (V BE = -5V)      V CE = V CEV      Tj = 100 o C                            4     mA
       IE BO     Emitter Cut-off Current   V EB = 5 V                                                2     mA
                 (I C = 0)
V CEO( SUS )* Collector-Emitter            I C = 0.2 A   L = 25 mH                    450                      V
              Sustaining Voltage           V clamp = 450 V
      h FE       DC Current Gain           I C = 24 A     V CE = 5 V                          9
  V CE (sat)     Collector-Emitter         I C = 20 A     IB = 4 A                                  1.5        V
                 Saturation Voltage        I C = 30 A     IB = 8 A                                  3.5        V
  VB E(sat)      Base-Emitter              I C = 20 A     IB = 4 A                                  1.6        V
                 Saturation Voltage
      di C /dt   Rate of Rise of           V CC = 300 V RC = 0          t p = 3 



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